Zobrazeno 1 - 2
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pro vyhledávání: '"O V Kurnosikov"'
Autor:
T G Cherneta, I P Ostrovskii, A I Klimovskaya, S V Svechnikov, I V Prokopenko, A Oberemok, O V Kurnosikov
Publikováno v:
Journal of Physics: Condensed Matter. 14:1735-1743
The surfaces of wire-like silicon crystals grown by self-organization processes are characterized using electron microscopy of high resolution, scanning tunnelling microscopy, x-ray microprobe analysis, secondary-ion mass spectroscopy, and Auger elec
Publikováno v:
Surface Review and Letters. :1021-1024
Noise and fluctuations of tunneling current of STM can be analyzed for a surface investigation. The tunnel gap can behave as a passive element, which transforms the noise in the sample–tip-piezodriver system and as an active source of noise due to