Zobrazeno 1 - 10
of 116
pro vyhledávání: '"O V, Aleksandrov"'
Autor:
O. V. Aleksandrov
Publikováno v:
Історія науки і техніки, Vol 8, Iss 1(12), Pp 5-11 (2018)
У статті розглядається особистий внесок видатного інженера і вченого в області теплотехніки, почесного академіка В. Г. Шухова в розвито
Externí odkaz:
https://doaj.org/article/eb90239f0d9b4389bcec6c0f1c5350f8
Autor:
O. V. Aleksandrov
Publikováno v:
Semiconductors. 56:241-245
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5671abef94ac80cfefcc4a9afba4f6b
https://doi.org/10.1134/s1063782622040017
https://doi.org/10.1134/s1063782622040017
Publikováno v:
Semiconductors. 56:160-163
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94cd54bccd6a0b5f02ba38448b09b1ad
https://doi.org/10.1134/s1063782622020038
https://doi.org/10.1134/s1063782622020038
Autor:
O. V. Aleksandrov
Publikováno v:
Semiconductors. 55:578-582
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9de563ba3a50a69b988c59534395c0cf
https://doi.org/10.1134/s1063782621070046
https://doi.org/10.1134/s1063782621070046
Autor:
O. V. Aleksandrov
Publikováno v:
Semiconductors. 55:207-213
The effect of the intensity of ionizing radiation on the volume charge and surface-state density of metal—oxide—semiconductor (MOS) structures with thin gate silicon dioxide is modeled. It is shown that the dependences of the surface-state densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a512709f509204f743d4749f7171a4f6
https://doi.org/10.1134/s1063782621020068
https://doi.org/10.1134/s1063782621020068
Autor:
O. V. Aleksandrov
Publikováno v:
Vestnik MGIMO-Universiteta, Vol 0, Iss 3(30), Pp 12-17 (2013)
This article deals with the Arctic strategy of the European Union. The main task of the author is to show the development of the EU’s Arctic policy during the previous 5 years, to analyze motivations of the EU’s actions in the Arctic, to assess t
Externí odkaz:
https://doaj.org/article/0bcaee9a37f74a5b9a3f2af7e35cb967
Autor:
O. V. Aleksandrov
Publikováno v:
Vestnik MGIMO-Universiteta, Vol 0, Iss 2(29), Pp 18-23 (2013)
This article is devoted to a problem of security of the Arctic region. The author portrays the contemporary state of the Arctic region, indicates changes which happened in the region after the end of "the cold war", analyzes the role which regional a
Externí odkaz:
https://doaj.org/article/91fe1685eabc4eb9b7859adcfcb00049
Autor:
O. V. Aleksandrov
Publikováno v:
Semiconductors. 54:1215-1219
It is shown that the description of the dispersive transport of H+ ions, based on the multi-trapping model, allows quantitative description of the kinetics of surface-state formation in metal-oxide-semiconductor (MOS) structures after exposure to ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c46705881d05eb459d0544d1a37df630
https://doi.org/10.1134/s1063782620100036
https://doi.org/10.1134/s1063782620100036
Autor:
O. V. Aleksandrov
Publikováno v:
Semiconductors. 54:233-239
A new quantitative model of the negative-bias temperature instability (NBTI) of p-MOS (metal-oxide-semiconductor) transistors is developed. The model is based on the reaction of the depassivation of surface states at the Si–SiO2 interphase boundary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78e971ca4e63662a9a8a53cc163b93a7
https://doi.org/10.1134/s1063782620020037
https://doi.org/10.1134/s1063782620020037
Autor:
S. A. Mokrushina, O. V. Aleksandrov
Publikováno v:
Semiconductors. 54:240-245
A new quantitative model of the effect of the gate bias on the threshold voltage of metal-oxide-semiconductor (MOS) structures under ionizing irradiation is developed based on the consideration of hole trapping from the entire volume of the gate diel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::875673956f411620e4bde3a5eddd537e
https://doi.org/10.1134/s1063782620020025
https://doi.org/10.1134/s1063782620020025