Zobrazeno 1 - 10
of 46
pro vyhledávání: '"O Salehzadeh"'
We report a novel and simple fabrication process to realize vertically tapered spot size converters (SSC) on InP photonic integrated circuits. The vertical tapering was achieved via a linewidth controlled local optical dose variation, leading to a gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a61be23472af2b05fbb209fc70863ce
https://nrc-publications.canada.ca/eng/view/object/?id=1e09bc67-a57f-47ba-930c-90c7c4d8cb3a
https://nrc-publications.canada.ca/eng/view/object/?id=1e09bc67-a57f-47ba-930c-90c7c4d8cb3a
Publikováno v:
2019 IEEE Photonics Conference (IPC).
Avalanche photodiodes are fabricated and characterized, using a single diffusion fabrication process with the surface patterned by selective area growth prior to diffusion. Raster mapping of the photocurrent near the breakdown voltage is used to char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91b32339b188a91c9021f5ad4f8f1eef
https://doi.org/10.1109/ipcon.2019.8908476
https://doi.org/10.1109/ipcon.2019.8908476
Publikováno v:
Journal of Crystal Growth. 445:110-114
We report on the effects of Zn-doping using diethylzinc (DEZn) on the growth of In₁₋xGaxAsyP₁₋y quaternary layers (x=0.18–0.41 and y=0.34–0.76) by metalorganic chemical vapour deposition. Independent of the quaternary layer compositions,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a0134292766d1f904e2914d27dcf6a0
https://doi.org/10.1016/j.jcrysgro.2016.04.053
https://doi.org/10.1016/j.jcrysgro.2016.04.053
Publikováno v:
Nano Letters. 14:4125-4130
We have investigated the quantum efficiency of monolayer MoS2 light-emitting devices through detailed temperature and power-dependent photoluminescence studies and rate equation analysis. The internal quantum efficiency can reach 45 and 8.3% at 83 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba761e4260ccd64f9e81a60d26cbd075
https://doi.org/10.1021/nl5017283
https://doi.org/10.1021/nl5017283
Autor:
O. Salehzadeh, Simon P. Watkins
Publikováno v:
Journal of Crystal Growth. 325:5-9
In this work we show that the choice of Ga precursors has a striking effect on the growth kinetics of GaAs nanowires grown by metalorganic vapor phase epitaxy (MOVPE) using the vapor–liquid–solid (VLS) growth mechanism. We investigate the detaile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68b4267393fa22f48028bbfbf4fec9c3
https://doi.org/10.1016/j.jcrysgro.2011.04.039
https://doi.org/10.1016/j.jcrysgro.2011.04.039
Publikováno v:
Nano letters. 14(7)
We have investigated the quantum efficiency of monolayer MoS2 light-emitting devices through detailed temperature and power-dependent photoluminescence studies and rate equation analysis. The internal quantum efficiency can reach 45 and 8.3% at 83 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::558535751daaaef4bb4c1797615041c9
https://pubmed.ncbi.nlm.nih.gov/24905765
https://pubmed.ncbi.nlm.nih.gov/24905765
Autor:
Songrui Zhao, Binh Huy Le, Karen L. Kavanagh, Shima Alagha, Zetian Mi, O. Salehzadeh, Simon P. Watkins
Publikováno v:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI.
We have investigated the molecular beam epitaxial growth and characterization of InN nanowires. Detailed optical and electrical transport studies confirm that nondoped InN nanowires can exhibit extremely low ( 15 cm -3 ) residual electron density. Fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf76c91d2eca8916328bd3c1922491e9
https://doi.org/10.1117/12.2038663
https://doi.org/10.1117/12.2038663
Copper (Cu) and iron (Fe) electrical contacts to gallium arsenide (GaAs) and indium arsenide (InAs) nanowires (NWs) have been fabricated via electrodeposition. For undoped or low carbon-doped (10 17/cm 3), p-type GaAs NWs, Cu or Fe nucleate and grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddac9b8ac689a0becd7c546de25225ff
https://doi.org/10.1088/0268-1242/27/10/105020
https://doi.org/10.1088/0268-1242/27/10/105020
Publikováno v:
Journal of Applied Physics. 115:234305
We report on the surface passivation of Au-assisted Te-doped GaAs nanowires (NWs) grown by metalorganic vapor phase epitaxy. The electrical properties of individual free standing NWs were assessed using a tungsten nano-probe inside a scanning electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3538b78dd8cb4d3d328302361b15f3c
https://doi.org/10.1063/1.4883960
https://doi.org/10.1063/1.4883960
Publikováno v:
Semiconductor Science and Technology. 29:085002
Wafer bonding using an intermediate layer such as SiO2 is now a standard method for the fabrication of engineered substrates in the semiconductor industry, the prime example being silicon-on-insulator (SOI) substrates. However, direct semiconductor-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d20a78a89527ce1954ef334419806108
https://doi.org/10.1088/0268-1242/29/8/085002
https://doi.org/10.1088/0268-1242/29/8/085002