Zobrazeno 1 - 5
of 5
pro vyhledávání: '"O I Buzhinskiĭ"'
Publikováno v:
Soviet Journal of Quantum Electronics. 13:115-117
An experimental investigation was made of a copper vapor laser having a sectioned transverse discharge. Optically controlled semiconductor switches were employed to switch an excitation pulse generator. Their switching stability was ~0.01 nsec. The r
Autor:
A I Moshkunov, M E Levinshteĭn, Igor' V Grekhov, V M Aleksandrov, O I Buzhinskiĭ, V G Sergeev
Publikováno v:
Soviet Journal of Quantum Electronics. 11:111-113
A high-power semiconductor nanosecond switch, in the form of a thyristor structure activated by a laser pulse, was investigated. This switch could handle currents up to ~5×10 kA under voltages of 5 kV in a time of ~1 nsec. The principle of its opera
Autor:
O I Buzhinskiĭ, M L Petrov
Publikováno v:
Soviet Journal of Quantum Electronics. 11:1114-1116
A numerical solution of the Boltzmann equation for the electron energy distribution function is used to determine the rate constants of the excitation of laser-active levels and the electron energy balance in a discharge in a Cu–Ne mixture. This is
Publikováno v:
Soviet Journal of Quantum Electronics. 12:1197-1199
The results are given of an investigation of a nanosecond pulse modulator for a transversely excited Cu laser. The modulator switch took the form of an RU-62 spark gap, which enabled switching of pulses having a current of ~10 kA at a voltage of ~10
Publikováno v:
Soviet Journal of Quantum Electronics. 11:1026-1028
A listing is given of the characteristics of high-temperature ceramics used widely in elemental vapor lasers. It is shown that a ceramic based on pyrolytic boron nitride has the best characteristics as judged by a number of criteria. A description is