Zobrazeno 1 - 10
of 14
pro vyhledávání: '"O B Mavritskii"'
Autor:
Dmitry V. Boychenko, A. N. Egorov, Alexander A. Pechenkin, O. B. Mavritskii, Dmitriy V. Savchenkov
Publikováno v:
Optical Sensing and Detection VI.
Singe event effect (SEE) simulation in modern integrated circuits (ICs) by femtosecond laser irradiation through the substrate allows eliminating a lot of problems connected to the presence of multiple opaque metal layers above the IC active layer. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f6f6a57a0ebc57f34678be041b6fe6d
https://doi.org/10.1117/12.2555772
https://doi.org/10.1117/12.2555772
Autor:
Alexander A. Pechenkin, A. N. Egorov, O. B. Mavritskii, Alexander I. Chumakov, A. Yu. Nikiforov
Publikováno v:
Instruments and Experimental Techniques. 59:627-649
A review of laser devices that are currently used to perform hardness evaluation of microelectronic devices that are exposed to heavy charged particles, with respect to local radiation effects is presented. A brief classification of ionization effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c5ffaaaf7f6c134968582b6e234b267
https://doi.org/10.1134/s0020441216050122
https://doi.org/10.1134/s0020441216050122
Autor:
A. N. Egorov, Alexander A. Pechenkin, Alexander I. Chumakov, O. B. Mavritskii, Dmitriy V. Savchenkov
Publikováno v:
Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XVIII.
The advances of the picosecond and femtosecond laser installations utilization for radiation hardness evaluation of semiconductor electronics for space applications are presented. The modern “local laser irradiation” method for single event effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb6c00b7b5fa7ee93e7f1d0a5855f74b
https://doi.org/10.1117/12.2288364
https://doi.org/10.1117/12.2288364
Autor:
Alexander A. Pechenkin, O. B. Mavritskii, A. N. Egorov, Nikita Smirnov, Alexander I. Chumakov, A. A. Nastulyavichus
Publikováno v:
Physics Procedia. 73:183-188
Experimental setup based on visible and NIR spectral range microscope with laser port and picosecond laser is developed for silicon integrated circuit (IC) failure analysis. The possibility of visualizing the topology of the submicron technology sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ed3e15228a24df049301f1cd0bf3280
Autor:
O. B. Mavritskii, Alexander I. Chumakov, D. V. Bobrovskii, D. V. Savchenkov, Alexander A. Pechenkin
Publikováno v:
Russian Microelectronics. 44:33-39
The results of computation-experimental modeling of single-event latchup effects under the laser radiation focused on the IC crystal backside—the substrate side—are presented. Possibilities of applying the technique of local laser irradiation to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f38f81057e8d46dd57d15979b7fa5b7e
https://doi.org/10.1134/s1063739715010072
https://doi.org/10.1134/s1063739715010072
Publikováno v:
Quantum Electronics. 44:1173-1178
The statistics of the ionisation response amplitude measured at selected points and their surroundings within sensitive regions of integrated circuits (ICs) under focused femtosecond laser irradiation is obtained for samples chosen from large batches
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91e2a52d031b875bfda093df8b9080e9
https://doi.org/10.1070/qe2014v044n12abeh015519
https://doi.org/10.1070/qe2014v044n12abeh015519
Publikováno v:
Superconductor Science and Technology. 32:075008
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d90aea7395f47c78c8e45dec91e97bf
https://doi.org/10.1088/1361-6668/ab14a3
https://doi.org/10.1088/1361-6668/ab14a3
Publikováno v:
Journal of Physics: Conference Series. 941:012078
The main purpose of the work is to improve the magnetic and transport characteristics of 2G HTS tapes by creating an ordered array of artificial pinning centers. Using a picosecond laser exposure, a local modification of the HTS film were performed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5cc037e99869006c9b77b1027d25276
https://doi.org/10.1088/1742-6596/941/1/012078
https://doi.org/10.1088/1742-6596/941/1/012078
Autor:
Alexander I. Chumakov, A. O. Akhmetov, O. B. Mavritskii, Alexander A. Novikov, Alexander A. Pechenkin
Publikováno v:
2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
IC's SEE sensitivity may depend on temperature. Traditional ion irradiation methods have some limitations, which laser SEE technique can overcome. In this work, SEE laser test results for various temperatures are discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17f3bd55d806a693aa0eab50dc8c80be
https://doi.org/10.1109/radecs.2015.7365661
https://doi.org/10.1109/radecs.2015.7365661
Autor:
O. B. Mavritskii, Dmitriy V. Savchenkov, Alexander A. Pechenkin, Alexandra V. Gordienko, A. N. Egorov
Publikováno v:
SPIE Proceedings.
The installations for laser testing of microelectronic elements (first of all - integrated circuits) of devices for space applications for hardness to local radiation effects from heavy charged particles are presented. The possibility of a focused pu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::184a3151d0715dcc146f31e39898d816
https://doi.org/10.1117/12.2079758
https://doi.org/10.1117/12.2079758