Zobrazeno 1 - 10
of 56
pro vyhledávání: '"O, Mayboroda"'
Autor:
O Mayboroda Alexander
Publikováno v:
AEROSPACE SPHERE JOURNAL. :24-33
Removing at least half of space debris, consisting of large metal objects, could be a cost-effective activity if, first, it becomes raw material, along with other extraterrestrial resources such as regolith, for the production of heat shields which i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05eefe819681ec24f440f8331a735e70
https://doi.org/10.30981/2587-7992-2020-107-2-24-33
https://doi.org/10.30981/2587-7992-2020-107-2-24-33
Autor:
I. O. Mayboroda, Yu. V. Grishchenko, N. K. Chumakov, M. L. Zanaveskin, E. M. Kolobkova, I. A. Chernykh
Publikováno v:
Crystallography Reports. 66:520-524
The formation of β-Si3N4 for subsequent growth of AlGaN and GaN heterostructures of silicon wafers has been studied. It is established that the native oxide layer protects the silicon surface from the formation of amorphous silicon nitride when heat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6029b5c961236c9285a5974b4a3668a1
https://doi.org/10.1134/s1063774521030172
https://doi.org/10.1134/s1063774521030172
Autor:
C. van Kooten, T. Pacchiarotta, P. van der Pol, J.W. de Fijter, N. Schlagwein, D. van Gijlswijk, O. Mayboroda
Publikováno v:
Kidney International Reports, Vol 1, Iss 4, p S9 (2016)
Externí odkaz:
https://doaj.org/article/80c5ebe66c6345a59716685058ec1f6b
Autor:
P. A. Perminov, I. A. Chernykh, I. O. Mayboroda, M. Y. Chernykh, I. S. Ezubchenko, A. S. Altakhov, M. L. Zanaveskin, J. V. Grishchenko, Vitaly I. Konov, Vadim S. Sedov, A. A. Andreev, A.K. Martyanov, E. M. Kolobkova
Publikováno v:
Nanotechnologies in Russia. 15:793-796
A new type of substrates for the growth of nitride heterostructures is presented that consists of a 125-nm thick silicon layer and 290-μm thick polycrystalline diamond. The possibility of epitaxial growth of nitride heterostructures on silicon–pol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf91e4d1a34c6e7bfebaf2261e27db34
https://doi.org/10.1134/s1995078020060075
https://doi.org/10.1134/s1995078020060075
Autor:
I. O. Mayboroda, M. M. Krymko, J. V. Grishchenko, S.V. Korneev, M. L. Zanaveskin, I. A. Chernykh, S.M. Romanovskiy, I. S. Ezubchenko, A. A. Andreev, V.F. Sinkevich, M. Y. Chernykh
Publikováno v:
Technical Physics Letters. 46:211-214
GaN heterostructures on silicon substrates have been grown by metalorganic chemical vapor deposition. Transistors with the gate periphery of 1.32 mm are designed. The saturation power of the package die at a frequency of 1 GHz was 4 and 6.3 W at supp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e74585a50d94feb1e0113dcdc0c75bd
https://doi.org/10.1134/s1063785020030050
https://doi.org/10.1134/s1063785020030050
Autor:
I. A. Chernykh, Yu. V. Khrapovitskaya, M. L. Zanaveskin, I. O. Mayboroda, A. N. Tsotsorin, P. A. Perminov, I. S. Ezubchenko, I. V. Semeykin, M. I. Chernykh, Yu. V. Grishchenko, A. A. Andreev, M. Y. Chernykh
Publikováno v:
Nanotechnologies in Russia. 15:169-174
Gallium nitride heterostructures on silicon substrates were grown by the method of gas-phase epitaxy from organometallic compounds. Based on them, transistors with a total gate width of 7.92 mm were created. The influence of the architecture of buffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8a778e003205813c0b0298593f215e9
https://doi.org/10.1134/s1995078020020123
https://doi.org/10.1134/s1995078020020123
Autor:
M. L. Zanaveskin, I. A. Chernykh, M. Ya. Chernykh, I. N. Trunkin, I. S. Ezubchenko, I. O. Mayboroda
Publikováno v:
Crystallography Reports. 65:122-125
The effect of trimethylaluminum preflow time on the crystalline quality of AlN films grown by metalorganic chemical vapor deposition on Si(111) substrates has been investigated. It is found that semipolar (10$$\bar {1}$$1) layers are formed in the Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5261105a2a82c64d33ce078aa246dc4d
https://doi.org/10.1134/s1063774520010071
https://doi.org/10.1134/s1063774520010071
Publikováno v:
Aerospace Sphere Journal. :38-45
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::735210a8ca5d978c6abc1044c9ce3b33
https://doi.org/10.30981/2587-7992-2019-101-4-38-45
https://doi.org/10.30981/2587-7992-2019-101-4-38-45
Publikováno v:
Aerospace Sphere Journal. :36-43
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ccdd61548c7c339a3d18520b35ab11c
https://doi.org/10.30981/2587-7992-2019-100-3-36-43
https://doi.org/10.30981/2587-7992-2019-100-3-36-43
Autor:
Alexander O. Mayboroda
Publikováno v:
Aerospace Sphere Journal. :40-48
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::300b2b88235755eb7bd7dabaca2b760c
https://doi.org/10.30981/2587-7992-2019-98-1-40-48
https://doi.org/10.30981/2587-7992-2019-98-1-40-48