Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Nyles W. Cody"'
Autor:
Daniel Connelly, Richard Burton, Nyles W. Cody, Pavel Fastenko, Marek Hytha, Robert Stephenson, Hideki Takeuchi, Keith Doran Weeks, Robert Mears
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1173-1178 (2018)
Oxygen-Inserted (OI) layers are shown to shield a buried boron profile from oxidation enhanced diffusion. A TCAD model for the OI layer, including point defect and dopant trapping, as implemented in Sentaurus Process is shown to match experimental re
Externí odkaz:
https://doaj.org/article/1a750a9654b04eb69ce69ef2f63670b7
Autor:
Hideki Takeuchi, Robert J. Mears, Robert J. Stephenson, Marek Hytha, Daniel Connelly, Pavel Fastenko, Richard Burton, Nyles W. Cody, Doran Weeks, Dmitri Choutov, Nidhi Agrawal, Suman Datta
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 481-486 (2018)
Interstitial trapping by oxygen-inserted silicon channel results in blocking of boron and phosphorus transient enhanced diffusion as well as retention of channel boron profiles during the gate oxidation process. The enhanced doping profile control ca
Externí odkaz:
https://doaj.org/article/79e4bf760b024923ad9ffad69e37f5e5
Autor:
Richard Burton, Marek Hytha, Robert J. Mears, Dmitri Choutov, Daniel Connelly, Pavel Fastenko, Robert John Stephenson, Suman Datta, Hideki Takeuchi, Nyles W. Cody, Nidhi Agrawal, Doran Weeks
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 481-486 (2018)
Interstitial trapping by oxygen-inserted silicon channel results in blocking of boron and phosphorus transient enhanced diffusion as well as retention of channel boron profiles during the gate oxidation process. The enhanced doping profile control ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d1e09f90386087a446fb5db83211489
https://ieeexplore.ieee.org/document/8094923/
https://ieeexplore.ieee.org/document/8094923/
Autor:
Xiangyang Huang, Robert John Stephenson, Nattapol Damrongplasit, Tiehui Liu, Nyles W. Cody, Hideki Takeuchi, Marek Hytha, Robert J. Mears, Nuo Xu
Publikováno v:
IEEE Transactions on Electron Devices. 61:3345-3349
An experimental and simulation study of short- channel planar bulk nMOSFET performance enhancement achieved with oxygen insertion technology is presented. The benefits of this technology for low-power digital logic circuits make it a promising evolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a198679056e985af63bc73179b831301
https://doi.org/10.1109/ted.2014.2342496
https://doi.org/10.1109/ted.2014.2342496
Autor:
Marek Hytha, A. Yiptong, Xiangyang Huang, Nuo Xu, Nyles W. Cody, Robert John Stephenson, Nattapol Damrongplasit, Hideki Takeuchi, Tiehui Liu, Robert J. Mears
Publikováno v:
IEEE Transactions on Electron Devices. 60:1790-1793
The benefit of supersteep retrograde (SSR) channel doping for suppressing short-channel effects in planar bulk MOSFET performance is studied via technology computer-aided design simulation of devices with gate length Lg = 28 nm. It is found that drai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39b48045074cbe0afa47433f217785e1
https://doi.org/10.1109/ted.2013.2253105
https://doi.org/10.1109/ted.2013.2253105
Autor:
Tiehui Liu, Robert J. Mears, Marek Hytha, Hideki Takeuchi, Nattapol Damrongplasit, Robert John Stephenson, Nuo Xu, Nyles W. Cody
Publikováno v:
2014 Silicon Nanoelectronics Workshop (SNW).
An oxygen-inserted quasi-planar segmented channel MOSFET design is proposed and studied for monolithic system-on-chip applications. Projections indicate that it will provide for higher performance than bulk FinFET technology at the 10 nm node, due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aabe6d989b252db87cd71c0bf8a6799d
https://doi.org/10.1109/snw.2014.7348549
https://doi.org/10.1109/snw.2014.7348549
Autor:
Jenn-Hwa Huang, M. Durlam, Ernie Schirmann, Saied N. Tehrani, Marino J. Martinez, Nyles W. Cody
Publikováno v:
Thin Solid Films. :493-496
NiGeW has been successfully implemented as a contact material on GaAs MESFETs in a production environment. However, when identical contacts were used on heterostructure field effect transistors (HFETs), a strong interaction was observed between NiGeW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a8cd6507da14824b7a75e7c7060b3b
https://doi.org/10.1016/s0040-6090(96)09035-9
https://doi.org/10.1016/s0040-6090(96)09035-9
Autor:
A. Yiptong, Tiehui Liu, Nyles W. Cody, Hideki Takeuchi, X. Huang, Nuo Xu, Nattapol Damrongplasit, Robert J. Mears, Robert John Stephenson, Marek Hytha
Publikováno v:
2012 International Electron Devices Meeting.
A detailed simulation and experimental study of MOSFET mobility enhancement and electrostatic integrity improvement achieved by the insertion of oxygen layers within the Si channel region is presented. The applicability of this technology to thin-bod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6226e04ad5c1abb672392ead4ac63a2
https://doi.org/10.1109/iedm.2012.6478990
https://doi.org/10.1109/iedm.2012.6478990
Autor:
Hideki Takeuchi, Seon Yong Cha, Nyles W. Cody, Nuo Xu, Robert J. Mears, Byungil Kwak, Robert John Stephenson, Marek Hytha, Tiehui Liu
Publikováno v:
Applied Physics Letters. 107:123502
High performance improvement (+88% in peak Gm and >30% in linear and saturation region drain currents) was observed for N-MOSFETs with Oxygen-Inserted (OI) Si channel. From TCAD analysis of the C-V measurement data, the improvement was confirmed to b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::430cfeaacb575a03fd23c7809742cbd4
https://doi.org/10.1063/1.4931431
https://doi.org/10.1063/1.4931431
Autor:
Marino J. Martinez, Ernie Schirmann, K. Barkley, Saied N. Tehrani, T. Driver, Nyles W. Cody, Jenn-Hwa Huang, M. Durlam
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
Power Pseudomorphic High Electron Mobility Transistors (P-HEMTs) with unprecedented efficiency are being produced for low-voltage portable wireless products. 12 mm devices operating at 3.5 V achieve more than 75% power added efficiency, 1.5 W output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3c6f27d222adacec9e123ca9ce03628
https://doi.org/10.1109/mwsym.1996.510994
https://doi.org/10.1109/mwsym.1996.510994