Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Nyles Cody"'
Autor:
Robert John Stephenson, Hideki Takeuchi, Hiu Yung Wong, Dmitri Choutov, K. Doran Weeks, Nyles Cody, Richard Burton, Robert J. Mears, Shuyi Li, Marek Hytha, Yi-Ann Chen, Daniel Connelly
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Insertion of partial monolayers of oxygen during silicon epitaxy (OI) has been shown experimentally and by simulation to facilitate the blocking interstitials during oxidation and thus to enable precision engineering of dopant profiles. This invited
Autor:
Keith Doran Weeks, Robert J. Mears, Marek Hytha, Nyles Cody, Richard Burton, Pavel Fastenko, Robert John Stephenson, Daniel Connelly, Hideki Takeuchi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1173-1178 (2018)
Oxygen-Inserted (OI) layers are shown to shield a buried boron profile from oxidation enhanced diffusion. A TCAD model for the OI layer, including point defect and dopant trapping, as implemented in Sentaurus Process is shown to match experimental re
Autor:
Marie-Laure David, David P. Brunco, Brice De Jaeger, Luc Lajaunie, Jerome Mitard, Laurent Souriau, Mireia Bargallo Gonzalez, Eddy Simoen, Gijs Brouwers, Shawn G. Thomas, Frederick Leys, Marc Meuris, Nyles Cody, Geert Eneman, Rui Yang
Publikováno v:
physica status solidi c. 6:1912-1917
The electrical impact of threading dislocations in strained-germanium (s-Ge) grown on a strain-relaxed Si0.2Ge0.8 buffer is investigated by means of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p+n and n+p junctions fabr
Autor:
Gijs Brouwers, Eddy Simoen, B. De Jaeger, Geert Eneman, Marc Meuris, M. Bargallo Gonzalez, Nyles Cody, Laurent Souriau, Shawn G. Thomas, Jerome Mitard, David P. Brunco
Publikováno v:
Materials Science in Semiconductor Processing. 11:364-367
It is shown that the high density of threading dislocations (TDs) and, more specifically, the high density of point defects associated with it and present in our strained Ge epitaxial layers on a Si 0.2 Ge 0.8 relaxed buffer layer degrades the mobili
Publikováno v:
Applied Surface Science. 224:347-349
Studies of low frequency 1/ f noise show that the key to reduce 1/ f noise is to reduce/eliminate interfacial oxides at the base–emitter interface. It was reported that an epitaxial silicon emitter has led to record 1/ f noise performance due to th
Publikováno v:
SPIE Proceedings.
A selection of thin Si layers grown epitaxially upon thick relaxed SiGe films were measured using the combination of optical metrology techniques available on the Opti-Probe 7341 system. The techniques used included in particular (i) angle resolved l