Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Nurulla F. Zikrillaev"'
Publikováno v:
East European Journal of Physics, Iss 3, Pp 291-295 (2023)
Based on the diffusion technology, many scientists and specialists have conducted research on obtaining materials that are fundamentally different in electrical and photo-thermal parameters from the original material by introducing various input atom
Externí odkaz:
https://doaj.org/article/79584a6831b443c6bafac5ad48f0ac1d
Autor:
Nurulla F. Zikrillaev, Giyosiddin A. ugli Kushiev, Sergey V. Koveshnikov, Bakhromjon A. Abdurakhmanov, Ugiloy K. Qurbonova, Abdujalol A. Sattorov
Publikováno v:
East European Journal of Physics, Iss 3, Pp 334-339 (2023)
The paper determines the technological regimes for obtaining GexSi1-x alloys by introducing germanium atoms into single-crystal silicon by the diffusion method. From the results of the study, it was found that the fundamental parameters of the formed
Externí odkaz:
https://doaj.org/article/57b1b938b2db4ea68f361e79223d0f0f
Publikováno v:
East European Journal of Physics, Iss 4 (2023)
The paper presents the results of an experimental study of surface morphology, elemental composition, electrophysical and optical properties of Si samples earlier doped with impurity atoms of Zn and S. The results of the study revealed a sufficient c
Externí odkaz:
https://doaj.org/article/4703f61f3cbd4f70b97038158707eed3
Autor:
Nurulla F. Zikrillaev, Kutup S. Ayupov, Manzura M. Shoabdirahimova, Feruza E. Urakova, Yoldoshali A. Abduganiev, Abdujalol A. Sattorov, Latofat S. Karieva
Publikováno v:
East European Journal of Physics, Iss 4 (2023)
One of the crucial phenomena is auto-oscillations of current in elementary and binary (AIIIBV, AIIBVI) semiconductor materials, which allow the creation of solid-state oscillators with a wide frequency range from 10-3 to 10-6 Hz. In this paper, we sh
Externí odkaz:
https://doaj.org/article/b38c35c33578496a9d6ea1d1afeaf1bd