Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Nurul Syuhadah Mohd Razali"'
Autor:
Siti NorFarah Nadia Mohd Salleh, Alhan Farhanah Abd Rahim, Nurul Syuhadah Mohd Razali, Rosfariza Radzali, Ainorkhilah Mahmood, Irni Hamiza Hamzah
Publikováno v:
Key Engineering Materials. 947:39-45
Compressively strained SiGe is an interesting channel material for sub 45 nm p-MOSFETs because of its superior hole mobility (up to 10x over bulk Si channels) and compatibility with current Si manufacturing technologies. In this work, the impact of h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b54afb2228d7ad093068aee6bb7bef71
https://doi.org/10.4028/p-3a337l
https://doi.org/10.4028/p-3a337l
Autor:
Alhan Farhanah Abd Rahim, Nurul Syuhadah Mohd Razali, Rosfariza Radzali, Ainokhilah Mahmood, Irni Hamiza Hamzah, Mohamed Fauzi Packeer Mohamed
Publikováno v:
Sains Malaysiana. 51:4087-4098
In this work, we reported on room temperature porous silicon (PS) and embedding PS using simple and economical techniques of electrochemical etching and thermal evaporation. The PS substrate was prepared using the technique of electrochemically etchi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fffc5ec6064cc7252c8a97c7d0efcc7
https://doi.org/10.17576/jsm-2022-5112-17
https://doi.org/10.17576/jsm-2022-5112-17
Autor:
Fatimah Zulkifli, Rosfariza Radzali, Alhan Farhanah Abd Rahim, Ainorkhilah Mahmood, Nurul Syuhadah Mohd Razali, Aslina Abu Bakar
Publikováno v:
Microelectronics International. 39:101-109
Purpose Porous silicon (Si) was fabricated by using three different wet etching methods, namely, direct current photo-assisted electrochemical (DCPEC), alternating CPEC (ACPEC) and two-step ACPEC etching. This study aims to investigate the structural
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18595ffa3acb4263fa6b0a7163cb44e3
https://doi.org/10.1108/mi-01-2022-0009
https://doi.org/10.1108/mi-01-2022-0009