Zobrazeno 1 - 10
of 96
pro vyhledávání: '"Nurul Syuhadah"'
Autor:
Mohd Razali, Nurul Syuhadah1, Abd Rahim, Alhan Farhanah1 alhan570@uitm.edu.my, Mohd Hassan, Nur Sabrina1, Radzali, Rosfariza1, Mahmood, Ainorkhilah2, Sabki, Syarifah Norfaezah3,4, Hamzah, Irni Hamiza1, Idris, Mohaiyedin1, Packeer Mohamed, Mohamed Fauzi5
Publikováno v:
International Journal of Nanoelectronics & Materials. Oct2024, Vol. 17 Issue 4, p521-528. 8p.
Publikováno v:
In Journal of Cleaner Production 25 March 2023 394
Autor:
Ahmad Tarmizi, Azira, Abd Rahim, Alhan Farhanah, Mohd Razali, Nurul Syuhadah, Radzali, Rosfariza, Mahmood, Ainorkhilah, Hamzah, Irni Hamiza
Publikováno v:
In Materials Today: Proceedings
Autor:
Nurul Syuhadah Hasny1,2, Iu Tong Lim1, Sakinah Mohamad1, Nur Asyilla Che Jalil3, Mohd Nazri Hassan4, Irfan Mohamad1, Norhafiza Mat Lazim1,5 norhafiza@usm.my
Publikováno v:
Polish Annals of Medicine. May2023, Vol. 30 Issue 1, p58-62. 5p.
Autor:
Zulkifli, Fatimah, Radzali, Rosfariza, Abd Rahim, Alhan Farhanah, Mahmood, Ainorkhilah, Mohd Razali, Nurul Syuhadah, Abu Bakar, Aslina
Publikováno v:
Microelectronics International, 2022, Vol. 39, Issue 3, pp. 101-109.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/MI-01-2022-0009
Autor:
Amirah Ibrahim, Wan Nur1 wannuramirah@uitm.edu.my, Razif, Nurul Syuhadah1
Publikováno v:
Malaysian Journal of Medicine & Health Sciences. 2022 Supplement, Vol. 18, p233-239. 7p.
Publikováno v:
In Journal of Air Transport Management September 2021 96
Autor:
Abd Rahim, Alhan Farhanah, Mustakim, Aida Azrenda, Mohd Razali, Nurul Syuhadah, Mahmood, Ainorkhilah, Radzali, Rosfariza, Zoolfakar, Ahmad Sabirin, Mohd Ali, Yusnita
Publikováno v:
Microelectronics International, 2020, Vol. 37, Issue 1, pp. 46-53.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/MI-08-2019-0052
Autor:
HASNY, Nurul Syuhadah1,2, AMIRUDDIN, Fatihatul Munirah3, HUSSAIN, Faezahtul Arbaeyah3, ABDULLAH, Baharudin1,4 baharudin@usm.my
Publikováno v:
Medeniyet Medical Journal. 2021, Vol. 36 Issue 4, p343-347. 5p.
Autor:
Siti NorFarah Nadia Mohd Salleh, Alhan Farhanah Abd Rahim, Nurul Syuhadah Mohd Razali, Rosfariza Radzali, Ainorkhilah Mahmood, Irni Hamiza Hamzah
Publikováno v:
Key Engineering Materials. 947:39-45
Compressively strained SiGe is an interesting channel material for sub 45 nm p-MOSFETs because of its superior hole mobility (up to 10x over bulk Si channels) and compatibility with current Si manufacturing technologies. In this work, the impact of h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b54afb2228d7ad093068aee6bb7bef71
https://doi.org/10.4028/p-3a337l
https://doi.org/10.4028/p-3a337l