Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Nurul Izzati Mohammad"'
Autor:
Syamsuriana Sidek, Nurul Azwa Mohamed Khadri, Mohd Fathi Abu Yaziz, Hazrina Hasbolah, Nurul Izzati Mohammad Nazari, Mohd Rosli Mohamad
Publikováno v:
INTERNATIONAL CONFERENCE ON BIOENGINEERING AND TECHNOLOGY (IConBET2021).
Autor:
Sidek, Syamsuriana, Khadri, Nurul Azwa Mohamed, Yaziz, Mohd Fathi Abu, Hasbolah, Hazrina, Nazari, Nurul Izzati Mohammad, Mohamad, Mohd Rosli
Publikováno v:
AIP Conference Proceedings; 2022, Vol. 2454 Issue 1, p1-7, 7p
Publikováno v:
ICVISP
Customer churn is one of the main problems in telecommunication industry. This study aims to identify the factors that influence customer churn and develop an effective churn prediction model as well as provide best analysis of data visualization res
Autor:
Sukreen Hana Herman, Ali Zaini Abdullah, Hanim Abdullah, Nurul Izzati Mohammad Noh, Wan Fazlida, Khairul Aimi Yusof
Publikováno v:
2014 IEEE Symposium on Computer Applications and Industrial Electronics (ISCAIE).
The performance of ISFET based pH sensor device in testing and characterization process of light effect has been successfully done. The experimental setup was carried out by Agilent Technologies B1500A Semiconductor Device Analyzer with an additional
Autor:
Mohd Rofei Mat Hussin, Nurul Izzati Mohammad Noh, Sukreen Hana Herman, Ali Zaini Abdullah, Khairul Aimi Yusof, Wan Fazlida Hanim Abdullah
Publikováno v:
RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics.
This study presents the effect of source-drain metal shield in FET structure on drain leakage current. The FET structure was fabricated on the wafer by using MIMOS's standard fabrication process. Aluminum (Al) was sputtered with thickness of 400 nm a
Autor:
Ali Zaini Abdullah, Khairul Aimi Yusof, Sukreen Hana Herman, Wan Fazlida Hanim Abdullah, Maizatul Zolkapli, Nurul Izzati Mohammad Noh
Publikováno v:
RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics.
The effect of channel width-to-length (W/L) ratio on MOSFET-ISFET structures was investigated from simulation and experimental approach. A metal-oxide-semiconductor field-effect-transistor (MOSFET) has been adopted to investigate the isothermal point
Autor:
Nurul Izzati Mohammad Noh, Ali Zaini Abdullah, Sukreen Hana Herman, Wan Fazlida Hanim Abdullah, Khairul Aimi Yusof
Publikováno v:
2013 IEEE 4th Control and System Graduate Research Colloquium.
This paper presents an investigation of dual passivation layer deposition on the characteristic of MOSFET/ISFET structure. PECVD TEOS oxide and LPCVD Silicon nitride (Si3N4) has been used as the passivation layer and deposited on the metal shield lay
Autor:
Sukreen Hana Herman, Ali Zaini Abdullah, Khairul Aimi Yusof, Nurul Izzati Mohammad Noh, Wan Fazlida Hanim Abdullah, Maizatul Zolkapli
Publikováno v:
2013 IEEE 4th Control and System Graduate Research Colloquium.
The pH sensing characterizations of silicon nitride (Si3N4) thin film, and Si3N4-based ISFET sensor were discussed in this paper. The Si3N4 thin film was fabricated with to form silicon/silicon dioxide/silicon nitride (Si/SiO2/Si3N4) structure while
Autor:
Noh, Nurul Izzati Mohammad, Yusof, Khairul Aimi, Abdullah, Ali Zaini, Herman, Sukreen Hana, Fazlida, Wan, Abdullah, Hanim
Publikováno v:
2014 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE); 2014, p82-87, 6p
Autor:
Noh, Nurul Izzati Mohammad, Yusof, Khairul Aimi, Zolkapli, Maizatul, Abdullah, Ali Zaini, Abdullah, Wan Fazlida Hanim, Herman, Sukreen Hana
Publikováno v:
RSM 2013 IEEE Regional Symposium on Micro & Nanoelectronics; 2013, p130-133, 4p