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Akademický článek
Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)
Autor: Frederick Ojiemhende Ehiagwina, Olufemi Oluseye Kehinde, Lateef Olashile Afolabi, Hassan Jimoh Onawola, Nurudeen Ajibola Iromini
Publikováno v: International Journal of Advances in Telecommunications, Electrotechnics, Signals and Systems, Vol 5, Iss 3, Pp 133-141 (2016)
Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for man
Externí odkaz: https://doaj.org/article/13c0855ec7424eabab56bfe2076e8292
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4
Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)
Autor: Olufemi Oluseye Kehinde, Nurudeen Ajibola Iromini, Lateef Olashile Afolabi, Frederick Ojiemhende Ehiagwina, Hassan Jimoh Onawola
Publikováno v: International Journal of Advances in Telecommunications, Electrotechnics, Signals and Systems, Vol 5, Iss 3, Pp 133-141 (2016)
Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for man
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbeb3be9409ce70c375f3585c379e298
https://doi.org/10.11601/ijates.v5i3.168
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