Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Nur K. Alam"'
Autor:
Mischa Thesberg, Md Nur K. Alam, Brecht Truijen, Ben Kaczer, Philippe J. Roussel, Zlatan Stanojevic, Oskar Baumgartner, Franz Schanovsky, Markus Karner, Hans Kosina
Publikováno v:
IEEE Transactions on Electron Devices. 69:3105-3112
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cb70aa9ae268d1b7e4c1becb5f417b1
https://doi.org/10.1109/ted.2022.3167942
https://doi.org/10.1109/ted.2022.3167942
Autor:
M.I. Popovici, J. Bizindavyi, P. Favia, S. Clima, Md. Nur K. Alam, R.K. Ramachandran, A.M. Walke, U. Celano, A. Leonhardt, S. Mukherjee, O. Richard, A. Illiberi, M. Givens, R. Delhougne, J. Van Houdt, G. Sankar Kar
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfbc22df6cf2cf53c1ca447f4a7b9f34
https://doi.org/10.1109/iedm45625.2022.10019525
https://doi.org/10.1109/iedm45625.2022.10019525
Autor:
Nur K. Alam, Barry O'Sullivan, S. R. C. McMitchell, Amey Mahadev Walke, Dimitri Linten, Ben Kaczer, Yusuke Higashi, K. Banerjee, Nicolo Ronchi, Laurent Breuil, G. Van den bosch, J. Van Houdt
Publikováno v:
IEEE Transactions on Electron Devices. 68:4391-4396
The ferroelectric (FE)-HfO2-based field-effect transistor (FEFET) is a promising candidate for emerging memory. However, data retention (DR) loss has been flagged as a key issue. Although two models of DR loss in FEFET have been proposed—the charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::317a497df8b01a00ffa75d721976e76a
https://doi.org/10.1109/ted.2021.3096510
https://doi.org/10.1109/ted.2021.3096510
Autor:
Md Nur K. Alam, Yusuke Higashi, B. Truijen, B. Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Ph. Roussel, Robin Degraeve, M. Heyns, J. Van Houdt
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25307321004d592c42483e8feb691c5c
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830476
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830476
Autor:
B. Truijen, B. O'Sullivan, Md Nur K. Alam, D. Claes, M. Thesberg, P. Roussel, A. Chasin, G. Van den Bosch, B. Kaczer, J. Van Houdt
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52ba6a60064bfdfafb50d72def741da2
https://doi.org/10.1109/irps48227.2022.9764603
https://doi.org/10.1109/irps48227.2022.9764603
Autor:
J. Van Houdt, Bertrand Parvais, M. Garcia Bardon, Y. Xiang, Ben Kaczer, K. Kaczmarek, Guido Groeseneken, Nur K. Alam, Lars-Ake Ragnarsson
The (doped-)hafnia-based’ ferroelectric FET (FeFET) is a promising candidate for low-power nonvolatile memories and shows potential use as a steep-slope low-power logic device. This requires accurate modeling of the metal-ferroelectric-insulator-si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d40ff5e19b583296423a61f688cf1e3b
https://lirias.kuleuven.be/handle/123456789/665899
https://lirias.kuleuven.be/handle/123456789/665899
Autor:
Geoffrey Pourtois, Ben Kaczer, Nur K. Alam, Barry O'Sullivan, Sergiu Clima, J. Van Houdt, M.M. Heyns
Publikováno v:
Journal of Applied Physics
A first-principles study of native point defects in monoclinic, cubic, two different tetragonal, and five different orthorhombic phases of hafnia (HfO2) is presented. They include vacancy of tri-coordinated and tetra-coordinated oxygen, metal vacancy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93e152df548efece0ce6b349189dd69c
Autor:
Guido Groeseneken, Ben Kaczer, J. Van Houdt, Y. Xiang, Lars-Ake Ragnarsson, M. Garcia Bardon, Nur K. Alam
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Unraveling the gate bias dependence of threshold voltage (V TH ) shift in hafnia-based FeFETs is a central element to device design and reliable operation. Here we present a domain-percolation-based ferroelectric (FE) V TH shift model, in which we at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66cb2b6b462e70f74a171c3fd80a3246
https://doi.org/10.1109/iedm13553.2020.9371907
https://doi.org/10.1109/iedm13553.2020.9371907
Autor:
M. Garcia Bardon, Guido Groeseneken, J. Van Houdt, Mihaela Popovici, Philippe Roussel, Y. Xiang, Naoto Horiguchi, B. Kaczer, Brecht Truijen, Lars-Ake Ragnarsson, M. Thesberg, Nur K. Alam, Bertrand Parvais, Anne S. Verhulst
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We present a kinetics-based analysis of the steep slope operation of ferroelectric (FE) FETs built on (i) a statistical multidomain nucleation-propagation mechanism of FE polarization switching and (ii) charge trapping in the high- K FE oxide. With a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8f16e657b0ffe468dcf0f761a4f4e14
https://doi.org/10.1109/iedm19573.2019.8993492
https://doi.org/10.1109/iedm19573.2019.8993492
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
We show that the non-linear positive capacitance (PC) of ferroelectrics (FE) can explain the steep subthreshold-slope (SS) observed in FE based MOSFETs and often attributed to the existence of a negative capacitance in FE capacitors. Physically attai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fceb2101129b642f752f5cfeb28a4dc8
https://lirias.kuleuven.be/handle/20.500.12942/700813
https://lirias.kuleuven.be/handle/20.500.12942/700813