Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Nur Efsan Koksal"'
Publikováno v:
IEEE Transactions on Electron Devices. 66:2238-2242
ZnO:Ga (GZO)/Si photodiodes having different thicknesses of GZO layer are fabricated by the sol–gel spin-coating method. The photoelectric properties of the devices are investigated by measuring the current–voltage (I–V) characteristics. The ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f9c1e54f1d517436e791130907b2702
https://doi.org/10.1109/ted.2019.2903600
https://doi.org/10.1109/ted.2019.2903600
Sol-gel method as a simple and low-cost approach is used to fabricate the heterostructures. Herein, Al-doped ZnO (AZO) thin films on p-Si subtrates are deposited via sol-gel method. AFM and SEM results reveal that the films have appreciably smooth su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52f39bbb4d4e0c38a65369b5501c82b6
https://avesis.gazi.edu.tr/publication/details/dc0217e9-6e88-4799-84d0-16655ae1922b/oai
https://avesis.gazi.edu.tr/publication/details/dc0217e9-6e88-4799-84d0-16655ae1922b/oai
Publikováno v:
2019 11th International Conference on Electrical and Electronics Engineering (ELECO).
In this work, a new Ga 2 O 3 /p-Si photodiodes with ZnO ARC layer are formed by sol-gel spin coating technique. Upon 254 nm and 395 nm UV illuminations, the device’s performances were examined in terms of electrical parameters. Under a 254 nm, a go
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9094a5d70cd50075a0678a0e6a2b3860
https://doi.org/10.23919/eleco47770.2019.8990415
https://doi.org/10.23919/eleco47770.2019.8990415
Publikováno v:
2019 11th International Conference on Electrical and Electronics Engineering (ELECO).
In this paper, a new SnO 2 /Ga 2 O 3 /Si heterostructure has been designed and fabricated via sol-gel spin coating method. The electrical property of SnO 2 /Ga 2 O 3 /Si heterostructure is investigated in the dark and under UV illumination with a wav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34215ae28025273ee6a75618d5b9a1a4
https://doi.org/10.23919/eleco47770.2019.8990517
https://doi.org/10.23919/eleco47770.2019.8990517
Publikováno v:
Physica B: Condensed Matter. 600:412599
We report a facile but effective method to produce heterojunction diodes by simply depositing AGZO thin films on Si substrates, and investigate the influences of the thickness of AGZO layer on diode performances. AGZO layers are subjected to device s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bffd05face00d90902c850e824ccd879
https://doi.org/10.1016/j.physb.2020.412599
https://doi.org/10.1016/j.physb.2020.412599
Publikováno v:
Optik. 224:165523
Heterojunction photodiodes of assembling Ag nanoparticles (NPs) onto Al-Ga co-doped ZnO (AGZO)/Si were fabricated via a sol-gel spin coating method. The current-voltage characteristics of the devices measured in the dark and under illuminated conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc746157b4dd88cb7010a6a49d897602
https://doi.org/10.1016/j.ijleo.2020.165523
https://doi.org/10.1016/j.ijleo.2020.165523