Unexpected transition from single to double quantum well potential induced by intense laser fields in a semiconductor quantum well.

Autor: Lima, F. M. S., Amato, M. A., Nunes, O. A. C., Fonseca, A. L. A., Enders, B. G., da Silva, E. F.

Publikováno v: Journal of Applied Physics; Jun2009, Vol. 105 Issue 12, p123111-1-123111-7, 7p, 6 Graphs

Magnetomagnon resonances and oscillations of conductivity in diluted magnetic semiconductor quantum wires.

Autor: Souto, E., Nunes, O. A. C., Fonseca, A. L. A., Agrello, D. A., da Silva, E. F.

Publikováno v: Journal of Applied Physics; Dec2007, Vol. 102 Issue 11, p113719, 8p, 5 Graphs

Ultrasound attenuation in superlattices.

Autor: Rodrigues, C., Nunes, O. A. C.

Publikováno v: Journal of Applied Physics; 6/1/1993, Vol. 73 Issue 11, p7162, 5p

Intense field effects on hydrogen impurities in quantum dots.

Autor: Qu Fanyao, Fonseca, A.L.A., Nunes, O. A. C.

Publikováno v: Journal of Applied Physics; 8/1/1997, Vol. 82 Issue 3, p1236, 6p, 3 Graphs

Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells

Autor: Enders, B. G., Lima, F. M. S., Fonseca, A. L. A., Nunes, O. A. C., Silva Jr, E. F. da

Publikováno v: Brazilian Journal of Physics v.39 n.1a 2009
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics, Volume: 39, Issue: 1a, Pages: 252-255, Published: APR 2009

The results of an accurate theoretical study on the effects of non-abrupt doping and interfacial profiles on the electron sheet density in one-side modulation-doped wurtzite GaN/AlGaN single quantum wells at low temperatures are presented. We solve c

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