Zobrazeno 1 - 10
of 582
pro vyhledávání: '"Nukala P"'
Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for steep switch
Externí odkaz:
http://arxiv.org/abs/2411.02054
Phase change materials (PCMs) that exhibit volatile resistive switching are promising for emulating neuronal oscillators. Charge transfer insulators, such as ReNiO3 (where Re represents rare earth metals like Pr, Nd, Sm, Eu...), form a family of PCMs
Externí odkaz:
http://arxiv.org/abs/2410.22868
Autor:
Jangra, Divya, De, Binoy Krishna, Sharma, Pragati, Chakraborty, Koushik, Parate, Shubham, Yogi, Arvind Kumar, Mittal, Ranjan, Gupta, Mayanak K, Nukala, Pavan, Velpula, Praveen Kumar, Sathe, Vasant G.
The anisotropic light-matter interactions in 2D materials have garnered significant attention for their potential to develop futuristic polarization-based optoelectronic devices, such as photodetectors and photo-actuators. In this study, we investiga
Externí odkaz:
http://arxiv.org/abs/2409.17570
Autor:
Haque, Asraful, Mandal, Suman Kumar, Parate, Shubham Kumar, Dsouza, Harshal Jason, Chandola, Sakshi, Nukala, Pavan, Raghavan, Srinivasan
Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrate by utilizing two-dimensional (2D) material interlayers like graphene
Externí odkaz:
http://arxiv.org/abs/2408.07920
Autor:
De, Binoy Krishna, Sathe, V. G., Divya, Sharma, Pragati, Parate, Shubham Kumar, Kunwar, Hemant Singh, Nukala, Pavan, Roy, S. B.
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often referred to as Mottronics. Achieving this resistive switching by mini
Externí odkaz:
http://arxiv.org/abs/2407.12507
Autor:
Haque, Asraful, D'Souza, Harshal Jason, Parate, Shubham Kumar, Sandilya, Rama Satya, Raghavan, Srinivasan, Nukala, Pavan
Integrating epitaxial BaTiO$_3$ (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous integration approaches that involve growth of BTO on ideal subst
Externí odkaz:
http://arxiv.org/abs/2407.11338
Brain-like self-assembled networks can infer and analyze information out of unorganized noisy signals with minimal power consumption. These networks are characterized by spatiotemporal avalanches and their crackling behavior, and their physical model
Externí odkaz:
http://arxiv.org/abs/2404.18600
On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced electrocaloric effects at phase transitions are good material candidates
Externí odkaz:
http://arxiv.org/abs/2403.18475
Recent discovery of giant electrostriction in rare earth (RE (III)) substituted ceria (CeO2) thin films driven by electroactive defect complexes and their coordinated elastic response, expands the material spectrum for electrostrain applications beyo
Externí odkaz:
http://arxiv.org/abs/2309.13433
Autor:
Dodd, Sierra A., Nukala, Arya, Connor, Isabelle, Auchettl, Katie, French, K. D., Law-Smith, Jamie A. P., Hammerstein, Erica, Ramirez-Ruiz, Enrico
Publikováno v:
Volume 959, Issue 2, id.L19, 12 pp, 2023
We study the properties of galaxies hosting mid-infrared outbursts in the context of a catalog of five hundred thousand galaxies from the Sloan Digital Sky Survey. We find that nuclear obscuration, as inferred by the surrounding dust mass, does not c
Externí odkaz:
http://arxiv.org/abs/2307.05670