Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Ntinas, Vasileios"'
Autor:
Singh, Chandan, Ntinas, Vasileios, Prousalis, Dimitrios, Wang, Yongmin, Demirkol, Ahmet Samil, Messaris, Ioannis, Rana, Vikas, Menzel, Stephan, Ascoli, Alon, Tetzlaff, Ronald
This paper introduces an innovative graphical analysis tool for investigating the dynamics of Memristor Cellular Nonlinear Networks (M-CNNs) featuring 2nd-order processing elements, known as M-CNN cells. In the era of specialized hardware catering to
Externí odkaz:
http://arxiv.org/abs/2408.03260
Autor:
Messaris, Ioannis, Ascoli, Alon, Demirkol, Ahmet S., Ntinas, Vasileios, Prousalis, Dimitrios, Tetzlaff, Ronald
In this theoretical study, we focus on the high-frequency response of the electrothermal NbO2-Mott threshold switch, a real-world electronic device, which has been proved to be relevant in several applications and is classified as a volatile memristo
Externí odkaz:
http://arxiv.org/abs/2401.10924
Autor:
Mallios, Konstantinos Alexandros, Tompris, Ioannis, Passias, Athanasios, Ntinas, Vasileios, Fyrigos, Iosif-Angelos, Sirakoulis, Georgios Ch.
Publikováno v:
In AEUE - International Journal of Electronics and Communications December 2024 187
Autor:
Vasileiadis, Nikolaos, Loukas, Panagiotis, Karakolis, Panagiotis, Ioannou-Sougleridis, Vassilios, Normand, Pascal, Ntinas, Vasileios, Fyrigos, Iosif-Angelos, Karafyllidis, Ioannis, Sirakoulis, Georgios Ch., Dimitrakis, Panagiotis
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices exhibit usual
Externí odkaz:
http://arxiv.org/abs/2103.09931
In this work, a versatile mathematical framework for multi-state probabilistic modeling of Resistive Switching (RS) devices is proposed for the first time. The mathematical formulation of memristor and Markov jump processes are combined and, by using
Externí odkaz:
http://arxiv.org/abs/2009.06325
Autor:
Fyrigos, Iosif-Angelos, Ntinas, Vasileios, Sirakoulis, Georgios Ch., Dimitrakis, Panagiotis, Karafyllidis, Ioannis G.
Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain their opera
Externí odkaz:
http://arxiv.org/abs/2008.07409
Autor:
Karamani, Rafailia-Eleni, Fyrigos, Iosif-Angelos, Ntinas, Vasileios, Liolis, Orestis, Dimitrakopoulos, Giorgos, Altun, Mustafa, Adamatzky, Andrew, Stan, Mircea R., Sirakoulis, Georgios Ch.
Memristors are novel non volatile devices that manage to combine storing and processing capabilities in the same physical place.Their nanoscale dimensions and low power consumption enable the further design of various nanoelectronic processing circui
Externí odkaz:
http://arxiv.org/abs/2003.06983
Autor:
Chatzinikolaou, Theodoros Panagiotis, Fyrigos, Iosif-Angelos, Karamani, Rafailia-Eleni, Ntinas, Vasileios, Dimitrakopoulos, Giorgos, Cotofana, Sorin, Sirakoulis, Georgios Ch.
Memristor networks are capable of low-power and massive parallel processing and information storage. Moreover, they have presented the ability to apply for a vast number of intelligent data analysis applications targeting mobile edge devices and low
Externí odkaz:
http://arxiv.org/abs/2002.06339
Autor:
Tsompanas, Michail-Antisthenis, Fyrigos, Iosif-Angelos, Ntinas, Vasileios, Adamatzky, Andrew, Sirakoulis, Georgios Ch.
Publikováno v:
In BioSystems August 2021 206
Autor:
Karamani, Rafailia-Eleni, Fyrigos, Iosif-Angelos, Tsakalos, Karolos-Alexandros, Ntinas, Vasileios, Tsompanas, Michail-Antisthenis, Sirakoulis, Georgios Ch.
Publikováno v:
In Chaos, Solitons and Fractals: the interdisciplinary journal of Nonlinear Science, and Nonequilibrium and Complex Phenomena April 2021 145