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pro vyhledávání: '"Novoselets, M.K."'
Autor:
Budzulyak, S.I., Ermakov, V.M., Kyjak, B.R., Kolomoets, V.V., Machulin, V.F., Novoselets, M.K., Panasjuk, L.I., Sus', B.B., Venger, E.F.
Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::a3ee69c99de1904748566d97f1d419bc
http://dspace.nbuv.gov.ua/handle/123456789/117939
http://dspace.nbuv.gov.ua/handle/123456789/117939
