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Autor:
Rogacheva, E. I., Doroshenko, A. N., Novak, K. V., Sipatov, A. Yu., Khramova, T. I., Saenko, S. A.
The temperature dependences (77-300 K) of the thermoelectric (TE) properties (the Seebeck coefficient S, electrical conductivity σ, Hall coefficient RH, Hall charge mobility μH>, and TE power factor P) were studied for freshly prepared and for expo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3033::9eb4e2cb202b30e39e1aece4d24822c7
http://repository.kpi.kharkov.ua/handle/KhPI-Press/61947
http://repository.kpi.kharkov.ua/handle/KhPI-Press/61947
The objects of the present study are thin films with thicknesses d = 45-620 nm prepared by thermal evaporation in vacuum from a single source, using undoped p- and n-type Bi₂Te₃ polycrystals with different stoichiometry (60.0 and 62.8 at. % Te, r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3033::87fc40c4713d2925f739f18ebc566f64
http://repository.kpi.kharkov.ua/handle/KhPI-Press/52117
http://repository.kpi.kharkov.ua/handle/KhPI-Press/52117
Autor:
Rogacheva, E. I., Novak, K. V., Orlova, D. S., Nashchekina, O. N., Sipatov, A. Yu., Lisachuk, G. V.
The room-temperature dependences of thermoelectric properties (the Seebeck coefficient S, the electrical conductivity σ, the Hall coefficient RH, and the thermoelectric power factor P = S2·σ) on the thickness (d = 5 - 250 nm) of the Bi0.98Sb0.02 s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3033::1217f1c692ec2c5bf9719dbb92a70dd3
http://repository.kpi.kharkov.ua/handle/KhPI-Press/61642
http://repository.kpi.kharkov.ua/handle/KhPI-Press/61642
Bi₂Te₃ semiconductor compound and Bi₂Te₃-based solid solutions are presently among the best lowtemperature thermoelectric materials. One of the methods of controlling the conductivity type and properties of Bi₂Te₃ is changing the stoichio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3033::c30b3378e9755643f263b489fe86de4a
http://repository.kpi.kharkov.ua/handle/KhPI-Press/52159
http://repository.kpi.kharkov.ua/handle/KhPI-Press/52159
Publikováno v:
Journal of Nano- & Electronic Physics; 2019, Vol. 11 Issue 5, p1-6, 6p