Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Nova Cheng-Yen Tsai"'
Autor:
Katherine Shu-Min Li, Leon Li-Yang Chen, Ken Chau-Cheung Cheng, Peter Yi-Yu Liao, Sying-Jyan Wang, Andrew Yi-Ann Huang, Leon Chou, Nova Cheng-Yen Tsai, Chen-Shiun Lee
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 35:372-374
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa5dcaeb9afcf95a7e0222f9e7d36e51
https://doi.org/10.1109/tsm.2022.3145855
https://doi.org/10.1109/tsm.2022.3145855
Autor:
Ken Chau-Cheung Cheng, Katherine Shu-Min Li, Sying-Jyan Wang, Andrew Yi-Ann Huang, Chen-Shiun Lee, Leon Li-Yang Chen, Peter Yi-Yu Liao, Nova Cheng-Yen Tsai
Publikováno v:
2022 IEEE International Test Conference (ITC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e80df864d449350e90727216aed3a14d
https://doi.org/10.1109/itc50671.2022.00070
https://doi.org/10.1109/itc50671.2022.00070
Autor:
Nova Cheng-Yen Tsai, Katherine Shu-Min Li, Leon Chou, Ji-Wei Li, Leon Li-Yang Chen, Andrew Yi-Ann Huang, Hsing-Chung Liang, Jwu E. Chen, Chen-Shiun Lee, Chun-Lung Hsu, Sying-Jyan Wang, Ken Chau-Cheung Cheng
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 34:161-167
Wafer test is carried out after integrated circuits (IC) fabrication to screen out bad dies. In addition, the results can be used to identify problems in the fabrication process and improve manufacturing yield. However, the wafer test itself may indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdb6a20e453a616bf09e0e03effcfdf9
https://doi.org/10.1109/tsm.2021.3065405
https://doi.org/10.1109/tsm.2021.3065405
Autor:
Ken Chau-Cheung Cheng, Leon Li-Yang Chen, Leon Chou, Andrew Yi-Ann Huang, Peter Yi-Yu Liao, Katherine Shu-Min Li, Nova Cheng-Yen Tsai, Sying-Jyan Wang
Publikováno v:
ITC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc333feab505d761b1bc8103982a7361
https://doi.org/10.1109/itc50571.2021.00043
https://doi.org/10.1109/itc50571.2021.00043
Autor:
Peter Yi-Yu Liao, Gus Chang-Hung Han, Sying-Jyan Wang, Andrew Yi-An Huang, Katherine Shu-Min Li, Nova Cheng-Yen Tsai, Leon Chou, Jwu E. Chen, Chun-Lung Hsu, Ken Chau-Cheung Cheng, Hsing-Chung Liang, Leon Li-Yang Chen
Publikováno v:
ETS
we propose an automatic wafer defect maps detection method based on unsupervised learning. There is no need for human labeling, and similar defect clusters are identified automatically without human intervention. As a result, the process is less erro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bfc17b151d323e607cae974278ca6d5
https://doi.org/10.1109/ets50041.2021.9465457
https://doi.org/10.1109/ets50041.2021.9465457
Autor:
Sying-Jyan Wang, Nova Cheng-Yen Tsai, Ken Chau-Cheung Cheng, Leon Chou, Chen-Shiun Lee, Katherine Shu-Min Li, Andrew Yi-Ann Huang, Leon Li-Yang Chen
Publikováno v:
ITC
We propose a machine learning based method targeted for accurate wafer defect map classification. The proposed method is referred to as TestDNA-E, as it applies ensemble learning based on improved TestDNA features. Experimental results show that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4790f28803e5978df54cf0c322fa7798
https://doi.org/10.1109/itc44778.2020.9325237
https://doi.org/10.1109/itc44778.2020.9325237
Wafer-Level Test Path Pattern Recognition and Test Characteristics for Test-Induced Defect Diagnosis
Autor:
Ken Chau-Cheung Cheng, Nova Cheng-Yen Tsai, Peter Yi-Yu Liao, Leon Chou, Ji-Wei Li, Andrew Yi-Ann Huang, Hsing-Chung Liang, Jwu E. Chen, Katherine Shu-Min Li, Leon Li-Yang Chen, Sying-Jyan Wang, Chen-Shiun Lee
Publikováno v:
DATE
Wafer defect maps provide precious information of fabrication and test process defects, so they can be used as valuable sources to improve fabrication and test yield. This paper applies artificial intelligence based pattern recognition techniques to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::388720e0b20bd7e63d28f4b6b35350e2
https://doi.org/10.23919/date48585.2020.9116546
https://doi.org/10.23919/date48585.2020.9116546