Liquid crystal-infiltrated nanocavity and waveguide in deeply etched InP-based photonic crystals

Autor: Barbu, I., Kicken, H.H.J.E., Nouwens, P.A.M., Heijden, van der, R.W., Karouta, F., Nötzel, R., Salemink, H.W.M., Leijtens, X.J.M.

Publikováno v: Proceedings of the14th European Conference on Integrated Optics, ECIO08, June 11-13, Eindhoven, The Netherlands, 197-200
STARTPAGE=197;ENDPAGE=200;TITLE=Proceedings of the14th European Conference on Integrated Optics, ECIO08, June 11-13, Eindhoven, The Netherlands

Deeply etched InP-based planar photonic crystals incorporating point and line defect structures were fabricated and experimentally investigated. Tuning of the H1 cavity mode and the W3 waveguide mini-stopband by infiltration with the liquid crystal K

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::0bfb5aa8e5ea7a0c536d85877f53a596
https://research.tue.nl/nl/publications/1083cf2d-6832-43a3-9bc0-9b2fff87c115

Deep dry etching process development for photonic crystals in InP-based planar waveguides

Autor: Heijden, van der, R., Andriesse, M.S.P., Carlstrom, C.F., Drift, van der, E.W.J.M., Geluk, E.J., Heijden, van der, R.W., Karouta, F., Nouwens, P.A.M., Oei, Y.S., Vries, de, T., Salemink, H.W.M., LaRue, R.

Publikováno v: Photonic crystal materials and nanostructures : 27-29 April 2004, Strasbourg, France, 523-532
STARTPAGE=523;ENDPAGE=532;TITLE=Photonic crystal materials and nanostructures : 27-29 April 2004, Strasbourg, France

Chlorine-based inductively coupled plasma etching processes are investigated for the purpose of etching two-dimensional photonic crystals in InP-based materials. Etch rates up to 3.7 mm/min and selectivity’s to the SiN mask up to 19 are reported. F

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a9a06116db10ae2b41521c580ea7989
https://research.tue.nl/en/publications/f34bc05c-9e63-40e8-8471-d2c63a5ba217

The influence of a Si-doped layer in an AlGaAs/GaAs heterostructure on the damage introduced by CH4/H2/Ar ECR plasma etching

Autor: Hassel, van, J.G., Es, van, C.M., Nouwens, P.A.M., Maahury, J.H., Wellen, J.S.

Publikováno v: Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society, 123-131
STARTPAGE=123;ENDPAGE=131;TITLE=Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society
Semiconductor and Integrated Optoelectronics Conference, SIOE '95

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a72045678cb3fa2b7fb74242f5164695
https://research.tue.nl/nl/publications/ae1b120a-13e1-46d6-ae5b-c685e26b696c

CH4/H2/Ar ECR plasma etching for AlGaAs/InGaAs/GaAs pseudomorphic HFETs.

Autor: van Hassel, J.G., van Es, C.M., Nouwens, P.A.M.

Publikováno v: Electronics Letters (Institution of Engineering & Technology); 05/11/1995, Vol. 31 Issue 10, p834-836, 3p

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