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Publikováno v:
2018 5th International Conference on Electrical and Electronic Engineering (ICEEE).
This paper presents an investigation of numerical modeling of SiGe HBT (Silicon-Germanium heterojunction Bipolar Transistor). For this, we consider three models: the so called Drift Diffusion Model (DDM), the Isothermal Energy Balance model (EB) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab231bef4b15338aa35fed6b3e8286c0
https://doi.org/10.1109/iceee2.2018.8391336
https://doi.org/10.1109/iceee2.2018.8391336
