Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Nour Sayed"'
Autor:
Nour, Sayed, Yang, Daya, Dai, Gong, Wang, Qinmei, Feng, Minze, Lila, Nermine, Chachques, Juan Carlos, Wu, Guifu
Publikováno v:
In International Journal of Cardiology 9 October 2013 168(4):4199-4208
Publikováno v:
IEEE Transactions on Magnetics. 57:1-10
In-memory computing promises to overcome memory and power walls by allowing efficient computing of operations inside the memory without the need to explicitly transfer operands back and forth to the processor core. This paradigm is enabled by emergin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b77a0209b1961532efffce040ce6db0d
https://doi.org/10.1109/tmag.2020.3013969
https://doi.org/10.1109/tmag.2020.3013969
Publikováno v:
ACM Journal on Emerging Technologies in Computing Systems. 17:1-21
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising candidate as a universal on-chip memory technology due to its non-volatility, high density, and scalability. However, high write energy and latency are its major shortcoming
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6d9292b241abbee2a2357c847a400fb
https://doi.org/10.1145/3423135
https://doi.org/10.1145/3423135
Publikováno v:
ACM Journal on Emerging Technologies in Computing Systems. 16:1-22
Various applications, such as multimedia, machine learning, and signal processing, have a significant intrinsic error resilience. This makes them preferable for approximate computing as they have the ability to tolerate computations and data errors a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d272f75ea703e15fca7f1d7928057ea5
https://doi.org/10.1145/3404980
https://doi.org/10.1145/3404980
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27:1329-1342
Spin-transfer torque magnetic random access memory (STT-MRAM) is an emerging nonvolatile memory technology and a potential candidate to replace CMOS-based on-chip memories. However, the bit-cell switching behavior is stochastic, which is further exac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::574b388a6e0f8485a40962533db4121f
https://doi.org/10.1109/tvlsi.2019.2903592
https://doi.org/10.1109/tvlsi.2019.2903592
Publikováno v:
ACM Transactions on Design Automation of Electronic Systems. 24:1-25
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising candidate for large on-chip memories as a zero-leakage, high-density and non-volatile alternative to the present SRAM technology. Since memories are the dominating component
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85a1424d55e8569c7f058df53d99969a
https://doi.org/10.1145/3321693
https://doi.org/10.1145/3321693
Publikováno v:
Artificial Organs. Dec2017, Vol. 41 Issue 12, pE356-E366. 11p.
Autor:
Nour, Sayed Millad
Publikováno v:
Nour, Sayed Millad. CFD simulations of flow in bent pipe at high Reynolds numbers conditions. Master thesis, University of Oslo, 2014
Externí odkaz:
http://hdl.handle.net/10852/42617
https://www.duo.uio.no/bitstream/handle/10852/42617/1/SayedMilladNour_thesis.pdf
https://www.duo.uio.no/bitstream/handle/10852/42617/1/SayedMilladNour_thesis.pdf
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
2018 23rd Asia and South Pacific Design Automation Conference (ASP-DAC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3b5531c92a0045d0f3fd44f40693a26
https://doi.org/10.1109/aspdac.2018.8297306
https://doi.org/10.1109/aspdac.2018.8297306