Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Nour Eddine Bourzgui"'
Autor:
Ali Soltani, Brahim Benbakhti, S. J. Duffy, K. Ahmeda, Hassane Ouazzani Chahdi, M. Boucherta, Karol Kalna, Nour Eddine Bourzgui, Weidong Zhang, M. Mattalah
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
International audience; A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and charge
Autor:
Maghnia Mattalah, Brahim Benbakhti, Nour Eddine Bourzgui, Hassane Ouazzani Chahdi, J.-C. Gerbedoen, Abdelatif Jaouad, Ali Soltani
Publikováno v:
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
IEEE Transactions on Nanotechnology, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
IEEE Transactions on Nanotechnology, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
Rectifying Titanium Nitride (TiN) gate contact technology is developed for AlGaN $/$ GaN based micro and nanometer HEMTs. A high compressive strain occurring in thinner TiN films (ranging from 5 nm to 60 nm), deposited by sputtering, leads to a reduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc95025a6b77e9e7dde36444d3d987a0
https://hal.archives-ouvertes.fr/hal-03322826
https://hal.archives-ouvertes.fr/hal-03322826
Autor:
Jean-Paul Salvestrini, Vincent Aubry, David Danovitch, Nour-Eddine Bourzgui, Hassane Ouazzani Chahdi, Yacine Halfaya, Abdallah Ougazzaden, Paul L. Voss, Suresh Sundaram, Hassan Maher, Omar Helli, Leo Breuil, Ali Soltani
Publikováno v:
2019 IEEE SENSORS
2019 IEEE SENSORS, Oct 2019, Montreal, Canada. IEEE, pp.1-4, 2020, Proceedings of 18th IEEE Sensors Conference, IEEE SENSORS 2019, ⟨10.1109/SENSORS43011.2019.8956568⟩
2019 IEEE SENSORS, Oct 2019, Montreal, Canada. pp.1-4, ⟨10.1109/SENSORS43011.2019.8956568⟩
2019 IEEE SENSORS, Oct 2019, Montreal, Canada. IEEE, pp.1-4, 2020, Proceedings of 18th IEEE Sensors Conference, IEEE SENSORS 2019, ⟨10.1109/SENSORS43011.2019.8956568⟩
2019 IEEE SENSORS, Oct 2019, Montreal, Canada. pp.1-4, ⟨10.1109/SENSORS43011.2019.8956568⟩
International audience; Gas sensors based on AlGaN/GaN transistors are fabricated using platinum gate to detect and to quantify H2 (1.5-10%) and O2 (1.5-100%) species at high temperature (500 °C). The metrics ΔI/Δt measured within the 5 first seco
Autor:
Hassan Maher, K. Ahmeda, Brahim Benbakhti, M. Boucherta, Weidong Zhang, Karol Kalna, Ali Soltani, S. J. Duffy, Nour-Eddine Bourzgui
Publikováno v:
2018 13th European Microwave Integrated Circuits Conference (EuMIC)
2018 13th European Microwave Integrated Circuits Conference (EuMIC), Sep 2018, Madrid, Spain. pp.214-217, ⟨10.23919/EuMIC.2018.8539935⟩
2018 13th European Microwave Integrated Circuits Conference (EuMIC), Sep 2018, Madrid, Spain. pp.214-217, ⟨10.23919/EuMIC.2018.8539935⟩
International audience; The source/drain and gate induced charge trapping within an AlGaN/GaN high electron mobility transistor is studied, under normal device operation, by excluding self-heating effects, for the first time. Through direct measureme
Autor:
Mohammed Boucherta, Wei D. Zhang, Brahim Benbakhti, Nour Eddine Bourzgui, S. J. Duffy, Karol Kalna, Ali Soltani
Publikováno v:
IEEE Access
IEEE Access, IEEE, 2018, 6, pp.42721-42728. ⟨10.1109/ACCESS.2018.2861323⟩
IEEE Access, Vol 6, Pp 42721-42728 (2018)
IEEE Access, 2018, 6, pp.42721-42728. ⟨10.1109/ACCESS.2018.2861323⟩
IEEE Access, IEEE, 2018, 6, pp.42721-42728. ⟨10.1109/ACCESS.2018.2861323⟩
IEEE Access, Vol 6, Pp 42721-42728 (2018)
IEEE Access, 2018, 6, pp.42721-42728. ⟨10.1109/ACCESS.2018.2861323⟩
International audience; ABSTRACT Operating temperature distributions in AlGaN/GaN gateless and gated devices arecharacterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantialrise of channel temperature a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca35dc00b3038ecb8e0a84216745a0d0
https://hal.archives-ouvertes.fr/hal-02273401
https://hal.archives-ouvertes.fr/hal-02273401
Autor:
Meriem Bouchilaoun, Hassan Maher, Brahim Benbakhti, Weidong Zhang, Nour-Eddine Bourzgui, M. Mattalah, S. J. Duffy, Ali Soltani, Karol Kalna, M. Boucherta
Publikováno v:
UK Semiconductors
UK Semiconductors, Jul 2017, Sheffield, United Kingdom. pp.S3040-S3043, ⟨10.1149/2.0111711jss⟩
ECS Journal of Solid State Science and Technology
ECS Journal of Solid State Science and Technology, IOP Science, 2017, 6 (11), pp.S3040-S3043. ⟨10.1149/2.0111711jss⟩
ECS Journal of Solid State Science and Technology, 2017, 6 (11), pp.S3040-S3043. ⟨10.1149/2.0111711jss⟩
UK Semiconductors, Jul 2017, Sheffield, United Kingdom. pp.S3040-S3043, ⟨10.1149/2.0111711jss⟩
ECS Journal of Solid State Science and Technology
ECS Journal of Solid State Science and Technology, IOP Science, 2017, 6 (11), pp.S3040-S3043. ⟨10.1149/2.0111711jss⟩
ECS Journal of Solid State Science and Technology, 2017, 6 (11), pp.S3040-S3043. ⟨10.1149/2.0111711jss⟩
International audience; An optimized fabrication process of ohmic contacts is proposed to reduce the source/drain access resistance (RC) and enhance DC/RF performance of AlGaN/GaN HEMTs with a high Al concentration. We show that source/drain RC can b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31512c2d193266e86340cd3bf9472521
https://cronfa.swan.ac.uk/Record/cronfa35704/Download/0035704-03102017150650.pdf
https://cronfa.swan.ac.uk/Record/cronfa35704/Download/0035704-03102017150650.pdf
Publikováno v:
Progress In Electromagnetics Research Letters
Progress In Electromagnetics Research Letters, 2012, 30, pp.49-58. ⟨10.2528/PIERL11121205⟩
Progress In Electromagnetics Research Letters, EMW Publishing, 2012, 30, pp.49-58
Progress In Electromagnetics Research Letters, 2012, 30, pp.49-58. ⟨10.2528/PIERL11121205⟩
Progress In Electromagnetics Research Letters, EMW Publishing, 2012, 30, pp.49-58
International audience; An integrated Terahertz {Mach-Zehnder} interferometer is presented in order to perform differential measurements in a chip. Both simulation and experiment are performed for validating the interferometer structure. Destructive
Autor:
Abdelkrim Talbi, Vincent Mortet, J-C Gerbedoen, A. Bassam, Ali Soltani, Ali BenMoussa, Nour-Eddine Bourzgui, Hassan Maher
Publikováno v:
Global Symposium on Millimeter-Waves (GSMM).
Fabrication of surface acoustic wave sensors (SAW) based on aluminum nitride (AlN) thin film are reported with improved performance using titanium nitride (TiN) nucleation buffer layer as plate electrode on (100) oriented Silicon (Si) substrate. AlN
Autor:
Thomas Dargent, Nour Eddine Bourzgui, Renaud Dufour, Vincent Thomy, Simon Laurette, Maxime Harnois
Publikováno v:
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2014, 13, 0002, 7 p. ⟨10.1051/j3ea/2014002⟩
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, EDP Sciences, 2014, 13, 0002, 7 p. ⟨10.1051/j3ea/2014002⟩
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2014, 13, 0002, 7 p. ⟨10.1051/j3ea/2014002⟩
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, EDP Sciences, 2014, 13, 0002, 7 p. ⟨10.1051/j3ea/2014002⟩
Les notions principales rencontrées en microfluidique sont mises en lumières dans ce module. Après une introduction générale sous forme de cours magistraux, les étudiants sont confrontés à des problèmes de dimensionnement de microcanaux à l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4785edee79f83ba2f1de841b0a2912a5
https://hal.science/hal-00996921
https://hal.science/hal-00996921
Publikováno v:
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, EDP Sciences, 2011, 10, pp.0001-1-9. ⟨10.1051/j3ea/2011013⟩
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2011, 10, pp.0001-1-9. ⟨10.1051/j3ea/2011013⟩
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, EDP Sciences, 2011, 10, pp.0001-1-9. ⟨10.1051/j3ea/2011013⟩
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2011, 10, pp.0001-1-9. ⟨10.1051/j3ea/2011013⟩
La microfluidique est un domaine en pleine expansion. Ses multiples applications expliquent l’engouement actuel pour cette thematique de recherche. Elles peuvent concerner l’etude de phenomenes physiques, la chimie analytique ou encore la biologi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::864e5c4647a79040a54a207f49087cf2
https://hal.archives-ouvertes.fr/hal-00806669
https://hal.archives-ouvertes.fr/hal-00806669