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pro vyhledávání: '"Nour E. Bourzgui"'
Autor:
Steven J. Duffy, Brahim Benbakhti, Karol Kalna, Mohammed Boucherta, Wei D. Zhang, Nour E. Bourzgui, Ali Soltani
Publikováno v:
IEEE Access, Vol 6, Pp 42721-42728 (2018)
Operating temperature distributions in AlGaN/GaN gateless and gated devices are characterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of ohmic conta
Externí odkaz:
https://doaj.org/article/bbf22d2d693443598d34f056dbb22158
