Widely Tunable (2.47–2.64 µm) Hybrid Laser Based on GaSb/GaInAsSb Quantum‐Wells and a Low‐Loss Si 3 N 4 Photonic Integrated Circuit

Autor: Samu‐Pekka Ojanen, Jukka Viheriälä, Nouman Zia, Eero Koivusalo, Joonas Hilska, Heidi Tuorila, Mircea Guina

Publikováno v: Laser & Photonics Reviews.

Photonic integrated circuits fabricated using a Si3N4 waveguide platform exhibit low losses in a wide wavelength region extending from visible to beyond 2 µm. This feature is exploited to demonstrate a high-performance integrated laser exhibiting br

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af4ae8611e1d003fc0895594203daf17
https://doi.org/10.1002/lpor.202201028

Hybrid silicon photonics DBR laser based on flip-chip integration of GaSb amplifiers and µm-scale SOI waveguides

Autor: Nouman Zia, Heidi Tuorila, Jukka Viheriälä, Samu-Pekka Ojanen, Eero Koivusalo, Joonas Hilska, Mircea Guina

The development of integrated photonics experiences an unprecedented growth dynamic, owing to accelerated penetration to new applications. This leads to new requirements in terms of functionality, with the most obvious feature being the increased nee

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e9580528d86e09905b55a4e85f266f3
https://trepo.tuni.fi/handle/10024/141460

Validation of Si3N4 Integrated Photonics Platform for Low-Loss Operation at Wavelengths up to 2.7 μm

Autor: Samu-Pekka Ojanen, Jukka Viheriälä, Nouman Zia, Mircea Guina

Publikováno v: Conference on Lasers and Electro-Optics.

The performance of waveguide components realized using 800-nm thick Si3N4 photonic integrated platform is assessed for operation at 2.6–2.7 μm. Propagation losses as low as 0.67 dB/cm and bend losses of 0.017 dB for 50 μm radius of curvature were

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::da7881fe08228f4940f0a09c01d90457
https://doi.org/10.1364/cleo_at.2022.jth3a.47

Monolithic $2\mu\mathrm{m}$ GaSb-based passively mode-locked laser

Autor: Topi Uusitalo, Eero Koivusalo, Jukka Viheriälä, Nouman Zia, Mircea Guina

Publikováno v: 2020 European Conference on Optical Communications (ECOC).

A double-section passive mode-locked GaSb-based laser emitting more than 10mW average power is presented. The device emits optical pulses at 18.76 GHz repetition rate and estimated pulse width of 1.3 ps. An optical spectrum as wide as 3.2 nm is recor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f64b313c4faac19dfc4321c7cb7b68c5
https://doi.org/10.1109/ecoc48923.2020.9333333

Precise length definition of active GaAs-based optoelectronic devices for low-loss silicon photonics integration

Autor: Nouman Zia, Heidi Tuorila, Riku Isoaho, Matteo Cherchi, Timo Aalto, Mircea Guina, Jukka Viheriälä, Mikko Harjanne

Publikováno v: Tuorila, H, Viheriälä, J, Zia, N, Cherchi, M, Harjanne, M, Isoaho, R, Aalto, T & Guina, M 2020, ' Precise length definition of active GaAs-based optoelectronic devices for low-loss silicon photonics integration ', Optics Letters, vol. 45, no. 4, pp. 943-946 . https://doi.org/10.1364/OL.382109

The length variation associated with standard cleaving of III–V optoelectronic chips is a major source of loss in the integration with the micron-scale silicon-on-insulator waveguides. To this end, a new, to the best of our knowledge, approach for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e646eb1131e4ad9061080c44840177bd
https://trepo.tuni.fi/handle/10024/135074