Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Noulie Theofylaktos"'
Publikováno v:
Thin Solid Films. 496:494-499
We report on the fabrication and performance of pentacene-based split-gate field effect transistors (FETs) on doped Si/SiO2 substrates. Several transistors with split gate structures were fabricated and demonstrated AND logic functionality. The trans
Autor:
Nicholas J. Pinto, Noulie Theofylaktos, Carl H. Mueller, Felix A. Miranda, Alan T. Johnson, Alan G. MacDiarmid, Daryl C. Robinson
Publikováno v:
Applied Physics Letters. 83:4244-4246
We report on the observation of field effect transistor (FET) behavior in electrospun camphorsulfonic acid doped polyaniline(PANi)/polyethylene oxide(PE0) nanofibers. Saturation channel currents are observed at surprisingly low source/drain voltages.
Publikováno v:
Journal of Applied Physics. 99:084504
A regio-regular poly (3-hexylthiophene) (RRP3HT) thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device demonstrates AND logic functionality. The device fu