Zobrazeno 1 - 10
of 141
pro vyhledávání: '"Nouchi, Ryo"'
Autor:
Nouchi, Ryo, Ikeda, Kei-ichiro
Publikováno v:
Phys. Chem. Chem. Phys., 2020, 22, 1268-1275
The unique thinness of two-dimensional materials enables control over chemical phenomena at their surfaces by means of various gating techniques. For example, gating methods based on field-effect-transistor configurations have been achieved. Here, we
Externí odkaz:
http://arxiv.org/abs/2106.04947
Publikováno v:
AIP Advances 10, 075312 (2020)
Water permeation pathways in electronic devices should be eliminated for the suppression of operational instabilities. We investigated possible pathways in field-effect transistors based on a laminated single crystal (SC) of an organic semiconductor,
Externí odkaz:
http://arxiv.org/abs/2106.04943
Publikováno v:
Nano Express 1 (2020) 010034
Herein, titania thin films are fabricated by a facile liquid-phase method based on vacuum filtration of a colloidal suspension of titania nanosheets, which is followed by thermal annealing to transform the nanosheet film into anatase TiO2. Nanosheet-
Externí odkaz:
http://arxiv.org/abs/2006.01343
Autor:
Ohoka, Takuya, Nouchi, Ryo
Publikováno v:
Nano Express 1, 010002 (2020)
Layered semiconductors, such as MoS2, have attracted interest as channel materials for post-silicon and beyond-CMOS electronics. Much attention has been devoted to the monolayer limit, but the monolayer channel is not necessarily advantageous in term
Externí odkaz:
http://arxiv.org/abs/2005.13723
Autor:
Nouchi, Ryo, Ikeda, Kei-ichiro
Publikováno v:
Appl. Phys. Express 13, 015005 (2020)
A charge-carrier reservoir is necessary for electrostatic control of the carrier concentration in a solid. The source/drain electrodes serve as carrier reservoirs in a field-effect transistor, but it is still unknown what serves as a reservoir in a t
Externí odkaz:
http://arxiv.org/abs/2005.11915
Publikováno v:
J. Mater. Chem. C 7, 1904 (2019)
Graphene is an ultrathin material, which allows us to control surface phenomena by means of field-effect gating. Among various surface phenomena, photo-oxidation is known to be a facile method to largely control the electronic structure of graphene.
Externí odkaz:
http://arxiv.org/abs/2002.01694
Autor:
Nouchi, Ryo
Publikováno v:
Adv. Mater. Interfaces 5, 1801261 (2018)
An electrode contact-related mechanism for the operational instability of organic electronic devices is proposed and confirmed via observation of a water-induced change in charge-injection barrier eights at the electrode/organic-semiconductor interfa
Externí odkaz:
http://arxiv.org/abs/1902.01640
Autor:
Nouchi, Ryo
Publikováno v:
Nanotechnology 28 (2017) 134003
The possible origins of metal-bilayer graphene (BLG) contact resistance are investigated by taking into consideration the bandgap formed by interfacial charge transfer at the metal contacts. Our results show that a charge injection barrier (Schottky
Externí odkaz:
http://arxiv.org/abs/1703.03521
Autor:
Nouchi, Ryo, Tanimoto, Takaaki
Publikováno v:
ACS Nano 9 (2015) 7429
Electrically stimulated switching of a charge injection barrier at the interface between an organic semiconductor and an electrode modified with a disordered monolayer (DM) is studied by using various benzenethiol derivatives as DM molecules. The swi
Externí odkaz:
http://arxiv.org/abs/1608.01058