Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Nouacry, A."'
Publikováno v:
In Microelectronics Journal January 1999 30(1):19-22
Publikováno v:
Journal of Electrical & Electronic Systems.
The hetero junctions GaN based offer an excellent potential for power applications at high frequency. This is due to the important energy of the bandgap and high saturation velocity of electrons. The high mobility transistors (HEMT - High Electron Mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bdb9f21025e862b47033efcdd2ba051
https://doi.org/10.4172/2332-0796.1000169
https://doi.org/10.4172/2332-0796.1000169
Publikováno v:
International Journal of Electronics. 99:141-148
This article presents an analytical model of surface potential, threshold voltage and subthreshold swing for a new structure of surrounding-gate MOSFET by combining dual-material gate, graded channel and gate stack. By comparison with published resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10311266937f137e01711a37e0c82d20
https://doi.org/10.1080/00207217.2011.589737
https://doi.org/10.1080/00207217.2011.589737
Publikováno v:
International Journal of Electronics. 92:437-443
A two-dimensional analytical model for fully depleted cylindrical/surrounding gate MOSFET is presented. We used the evanescent mode analysis to solve the 2D Poisson's equation and to deduce analytically the surface potential and threshold voltage exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3950af93161bf17edd2664a46e8b305f
https://doi.org/10.1080/08827510412331314412
https://doi.org/10.1080/08827510412331314412
Publikováno v:
Journal of Chemistry and Chemical Engineering. 8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9bcc01feabfd9faae5e277954cc5dc7
https://doi.org/10.17265/1934-7375/2014.03.016
https://doi.org/10.17265/1934-7375/2014.03.016
Publikováno v:
Microelectronics Journal. 30:19-22
The increase of the MOS integration scale entails the presence of the strong electrical fields in the MOS channel transistor, which cause the injection of hot carriers in the gate oxide and create defects at the Si/SiO2 interface and in the oxide lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dbe42330fce37d596e48284009b0e98
https://doi.org/10.1016/s0026-2692(98)00073-1
https://doi.org/10.1016/s0026-2692(98)00073-1
Publikováno v:
Microelectronics Journal. 28:85-91
The problems associated with the defects in a MOS transistor become significant with increase of integration scale. These problems entail a degradation of the integrated circuit reliability, reduction of their lifetime and can be repeated on the tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a25af6f06807a9358b75aa1668300e26
https://doi.org/10.1016/s0026-2692(96)00046-8
https://doi.org/10.1016/s0026-2692(96)00046-8
Publikováno v:
2011 Faible Tension Faible Consommation (FTFC).
We are presenting a convergence study of the evanescent model and the polynomial model with and without the Effective Conduction Path Effect (ECPE). These analytic models of the electric potential in the channel are used to analyze the short channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::523267b0e91edfc7a94daf60233da6b9
https://doi.org/10.1109/ftfc.2011.5948900
https://doi.org/10.1109/ftfc.2011.5948900
Publikováno v:
2011 International Conference on Multimedia Computing and Systems.
This paper presents an analytical model of surface potential, threshold voltage and subthreshold swing for a new structure of surrounding gate (SG) MOSFET by combining Dual-Gate-Material, Graded-Channel and Gate Stack. By comparison with published re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58bbf589401fe6b2ecfec641e33812bd
https://doi.org/10.1109/icmcs.2011.5945711
https://doi.org/10.1109/icmcs.2011.5945711
Publikováno v:
2011 International Conference on Multimedia Computing and Systems.
We are presenting a convergence study of the evanescent model and the polynomial model with and without the Effective Conduction Path Effect (ECPE). These analytic models of the electric potential in the channel are used to analyze the short channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::851ee4fe9993494bf013dfa25be2bc28
https://doi.org/10.1109/icmcs.2011.5945714
https://doi.org/10.1109/icmcs.2011.5945714