Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Notzel, N."'
Autor:
George, Richard E., Witzel, Wayne, Riemann, H., Abrosimov, N. V., Notzel, N., Thewalt, Mike L. W., Morton, John J. L.
Publikováno v:
Phys. Rev. Lett. 105, 067601 (2010)
Donors in silicon hold considerable promise for emerging quantum technologies, due to the their uniquely long electron spin coherence times. Bi donors in silicon differ from P and other Group V donors in several significant respects: they have the st
Externí odkaz:
http://arxiv.org/abs/1004.0340
Autor:
Zhukavin, R.Kh., Kovalevsky, K.A., Tsyplenkov, V.V., Shastin, V.N., Pavlov, S.G., Bottger, U., Hubers, H.-W., Riemann, H., Abrosimov, N.V., Notzel, N.
Publikováno v:
2009 34th International Conference on Infrared, Millimeter & Terahertz Waves; 2009, p1-2, 2p
Autor:
Pavlov, S.G., Bottger, U., Hubers, H.-W., Kimmitt, M.F., Zhukavin, R.Kh., Kovalevsky, K.A., Tsyplenkov, V.V., Abrosimov, N.V., Notzel, N., Riemann, H., Shastin, V.N.
Publikováno v:
2007 Joint 32nd International Conference on Infrared & Millimeter Waves & the 15th International Conference on Terahertz Electronics; 2007, p142-143, 2p
Autor:
Pavlov, S.G., Hubers, H.W., Hovenier, J.N., Klaassen, T.O., Carder, D.A., Phillips, P.J., Redlich, B., Riemann, H., Abrosimov, N.V., Notzel, N., Zhukavin, R.Kh., Shastin, V.N.
Publikováno v:
2006 Joint 31st International Conference on Infrared Millimeter Waves & 14th International Conference on Teraherz Electronics; 2006, p383-383, 1p