Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Nothern A"'
A unified model of droplet epitaxy for compound semiconductor nanostructures: experiments and theory
Autor:
Reyes, Kristofer, Smereka, Peter, Nothern, Denis, Millunchick, Joanna Mirecki, Bietti, Sergio, Somaschini, Claudio, Sanguinetti, Stefano, Frigeri, Cesare
We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with new experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures observed du
Externí odkaz:
http://arxiv.org/abs/1211.0486
Autor:
Busse, Lynda E., Soskind, Yakov, Kranefeld, Zachary, Carlson, Emily, Nothern, Denis, Licht, Abigail, Vandervelde, Thomas
Publikováno v:
Proceedings of SPIE; March 2024, Vol. 12893 Issue: 1 p128930F-128930F-7, 1160378p
Akademický článek
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Publikováno v:
In Organic Electronics December 2014 15(12):3529-3537
Autor:
Leigh Colvin, Andrea Wershof Schwartz, Colleen E. Jackson, Mary Beth Harrington, Sarah Seligman Rycroft, Amanda M. Brunette, Jane A. Driver, Alexandra Nothern
Publikováno v:
Arch Clin Neuropsychol
Interprofessional healthcare teams are increasingly viewed as a clinical approach to meet the complex medical, psychological, and psychosocial needs of older adult patients. Despite the fact that older adults are at risk for cognitive difficulties, n
Autor:
Meera Punjiya, Kevin Ryu, Brian Aull, K. Alexander McIntosh, Kevan Donlon, Michael Brattain, Hermanus Pretorius, Denis Nothern, Noah Pestana, Thomas Karolyshyn, Jorgo Mihallari, Zachary Kranefeld, Erik Duerr, Anup B. Katake, Alejandro Miguel San Martin
Publikováno v:
Advanced Photon Counting Techniques XVI.
Autor:
Wijewarnasuriya, Priyalal, D'Souza, Arvind I., Sood, Ashok K., Tally, Caroline D., Licht, Abigail S., Nothern, Denis, O'Connell, Christopher, Myszka, Michael, Donnelly, Joseph, McIntosh, Alex, Heidelberger, Christopher, Duerr, Erik
Publikováno v:
Proceedings of SPIE; October 2023, Vol. 12687 Issue: 1 p126870C-126870C-6, 1141837p
Akademický článek
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Autor:
Deng, Di, Nothern, Denis, Liaw, David, Liu, Thomas, Peterson, Peter, Gilchrist, Brian, Millunchick, Joanna
Publikováno v:
In Microelectronic Engineering 2011 88(11):3219-3223
Publikováno v:
MRS Advances. 2:271-276
AlGaN based multiple quantum wells (MQWs) were grown on 8° vicinal 4H p-SiC substrates by plasma-assisted molecular beam epitaxy. The MQWs were designed to emit near 300 nm using the wurtzite k.p model. The MQW periodicity and strain state were meas