Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Norman W. Schubring"'
Autor:
Norman W. Schubring, Joseph V. Mantese
Publikováno v:
Integrated Ferroelectrics. 37:245-257
The properties of polarization-graded ferroelectric devices are reviewed and the structures are compared to charge-density modulated semiconductors. “Transpacitor” devices are described as the dielectric analogues of semiconductor diode junctions
Autor:
J. J. Nazarko, A. B. Catalan, Joseph V. Mantese, Vaman M. Naik, Majed Mohammed, U. D. Venkateswaran, C. S. Flattery, Norman W. Schubring, Greg Auner, Ratna Naik, Adolph L. Micheli
Publikováno v:
Physical Review B. 61:11367-11372
We have studied the temperature dependence of the Raman spectra of ceramic bulk and thin-film samples of polycrystalline ${\mathrm{Ba}}_{1\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{TiO}}_{3}$ $(x=0,$ 0.1, 0.2, and 0.3) in the range between room temper
Autor:
A. B. Catalan, Adolph L. Micheli, Majed Mohammed, Joseph V. Mantese, Ratna Naik, Norman W. Schubring, Greg Auner
Publikováno v:
Integrated Ferroelectrics. 24:155-168
The diffuse-phase-transition class of ferroelectric materials allows the fabrication of films graded in composition: the consequence of which is an attendant gradient in electric dipole moment density. Alternating electric-field excitation of these g
Autor:
Joseph V. Mantese, Adolph L. Micheli, Ratna Naik, Majed Mohammed, Norman W. Schubring, Gregory W. Auner, Antonio B. Catalan
Publikováno v:
Journal of Applied Physics. 84:3322-3325
Ferroelectric thin films (∼1.2 μm) of BaxSr1−xTiO3 with gradients in composition normal to the growth surface were formed on platinum substrates by metalorganic decomposition. Effective (pseudo) pyroelectric coefficients as large as 0.06 μC/cm2
Autor:
Adolph L. Micheli, Antonio B. Catalan, Norman W. Schubring, Joseph V. Mantese, Ratna Naik, Majed Mohammed
Publikováno v:
Journal of Materials Research. 11:2588-2593
Thin films of BaxSr1−xTiO3 (x = 0.7, 0.8, 0.9, and 1.0) were prepared by metalorganic decomposition (MOD). The relative permittivity, dissipation, polarization, resistivity, and grain size of these films were studied as a function of composition an
Publikováno v:
Integrated Ferroelectrics. 12:1-9
Layer type Aurivillius compounds of complex ferroelectric bismuth oxides have become important as thin films for nonvolatile, random-access memories(DRAMS). This paper reports the investigation of the formation of these compounds and their electrical
Autor:
I. Burc Misirlioglu, Margarita P. Thompson, Adolph L. Micheli, Ratna Naik, Joseph V. Mantese, G. Auner, S. Pamir Alpay, Norman W. Schubring
Publikováno v:
Applied Physics Letters. 81:1068-1070
Polarization-graded ferroelectrics and their electrically active embodiments, graded ferroelectric devices and transpacitors, have been formed from a variety of material systems, both by grading the composition of the ferroelectric and by imposing te
Autor:
Adolph L. Micheli, Norman W. Schubring, K.L. Soch, R.J. Lopez, Antonio B. Catalan, K. Ng, J. V. Mantese, G. Lung, S.H. Klapper
Publikováno v:
IEEE Transactions on Electron Devices. 40:320-324
Potassium tantalum niobate (KTN) films, 10- mu m thick, with a nominal Curie temperature of -20 degrees C were formed on polished platinum-coated sacrificial yttria substrates by metalorganic deposition (MOD). These KTN films were used to fabricate f
Publikováno v:
Applied Physics Letters. 79:4007-4009
The energy gain of polarization-graded ferroelectric devices, configured as active transcapacitive elements, have been measured. Gain factors in excess of 1000 were obtained for small signal, static inputs; yielding charge gain amplifiers with gain f
Publikováno v:
Applied Physics Letters. 78:524-526
“Up” and “down” hysteresis offsets were observed in polarization-graded ferroelectrics. The polarization gradients were achieved by imposing temperature gradients across a bulk ferroelectric material near its Curie temperature. In the absence