Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Norman R. Scheinberg"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 30:872-880
A GaAs MESFET model is presented that addresses the modeling problem arising from the discrepancy between the derivatives of the dc current and the measured small signal parameters of a GaAs MESFET. This discrepancy traditionally required the user of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fd6739313e776087f51789b7c03a4c3
https://doi.org/10.1109/4.400429
https://doi.org/10.1109/4.400429
Publikováno v:
IEEE Journal of Solid-State Circuits. 26:1834-1839
The authors describe the design of transimpedance amplifiers using GaAs MESFET technology. A GaAs transimpedance preamplifier for fiber-optic receivers has been fabricated with two gain stages and an inducer-FET load structure that reduces noise. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d16ca6f8b2324ff3a75d4d33b7bdbe44
https://doi.org/10.1109/4.104175
https://doi.org/10.1109/4.104175
Autor:
Norman R. Scheinberg, S. Kent, D. Marz, V. Fedoroff, R. Michels, M. Waight, K. Li, D. Stoffman
Publikováno v:
IEEE 1993 International Conference on Consumer Electronics Digest of Technical Papers.
A GaAs up converter integrated circuit used for a double conversion cable TV "set-top" tuner is described. The up converter IC converts the 50 to 550 MHz band to an IF of 700 MHz. The IC meets the linearity and noise figure requirements for a cable T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::283244581a4529be1f0e500a854ffd56
https://doi.org/10.1109/icce.1993.697566
https://doi.org/10.1109/icce.1993.697566
Publikováno v:
SPIE Proceedings.
GaAs MESFET technology is 'ideal for use in lightwave receiver appli-cations. FET devices have a fundamental advantage over BJT transis- tors in low noise applications because of their inherent high input inipedance. Another advantage comes fron the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73783555f3daa126cc8256f30f24db86
https://doi.org/10.1117/12.49322
https://doi.org/10.1117/12.49322