Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Norman A. Gunther"'
Publikováno v:
IEEE Transactions on Electron Devices. 62:2542-2548
Distribution and intensity of electrostatic field in a trench insulated gate bipolar transistor, a key factor in the breakdown of such power semiconductor devices, are investigated using the variational thermodynamic methodology based on device Helmh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f4499da248eeb27734eb48906c7d7cb
https://doi.org/10.1109/ted.2015.2443060
https://doi.org/10.1109/ted.2015.2443060
Publikováno v:
2017 2nd International Conference on Communication Systems, Computing and IT Applications (CSCITA).
The performance of the Trench Insulated Gate Bipolar Transistor is of special concern to the Smart Grid community. Here, a novel methodology for the quasi-static behavior of the device is introduced which is based on a firmly established law of class
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b490a258db53f1412ce093017539e57a
https://doi.org/10.1109/cscita.2017.8066536
https://doi.org/10.1109/cscita.2017.8066536
Publikováno v:
IEEE Transactions on Electron Devices. 61:957-962
Devices consisting of multiple distinct regions of semiconductor, dielectric, and conductor present special challenges to standard analysis methods. It is imperative to understand the interactions among these multiple regions because of their direct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be29d1f2bfecb694cce65e5f69333cd0
https://doi.org/10.1109/ted.2014.2305718
https://doi.org/10.1109/ted.2014.2305718
Publikováno v:
Vacuum. 86:2067-2074
In recent years, the wavelet transform has proven to be an extremely powerful image-processing tool. Here, we have developed a wavelet-enhanced Bayesian methodology to analyze the AFM images of organic crystals, such as pentacene, using the Haar wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7946311401e91fae1c93ae54a5442e8c
https://doi.org/10.1016/j.vacuum.2012.04.014
https://doi.org/10.1016/j.vacuum.2012.04.014
Publikováno v:
Materials Characterization. 62:706-715
In this paper we present a methodology to characterize surface nanostructures of thin films. The methodology identifies and isolates nanostructures using Atomic Force Microscopy (AFM) data and extracts quantitative information, such as their size and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f3621758b07da1a9567c734d98d9a79
https://doi.org/10.1016/j.matchar.2011.04.001
https://doi.org/10.1016/j.matchar.2011.04.001
Publikováno v:
Journal of Experimental Nanoscience. 6:451-463
In this article, we present a new methodology to characterise surface nanostructures of thin films. The methodology focuses on isolating nanostructures and extracting quantitative information, such as their shape and size, based on atomic force micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::905d75140cdea788f7ade6cd8a26e64e
https://doi.org/10.1080/17458080903531039
https://doi.org/10.1080/17458080903531039
Autor:
Norman G. Gunther, Mahmudur Rahman, Bryan P. Ribaya, Joseph Makarewicz, Cattien V. Nguyen, Darrell L. Niemann
Publikováno v:
Solid-State Electronics. 52:1680-1686
In this paper we present an empirical study of some dynamic properties of an individual carbon nanotube (CNT) field emission electron source system. We propose a circuit model that represents the CNT cathode to anode diode as a capacitor in parallel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c971e77cca07cc8e4fd593870a91d49d
https://doi.org/10.1016/j.sse.2008.06.031
https://doi.org/10.1016/j.sse.2008.06.031
Publikováno v:
IEEE Transactions on Electron Devices. 54:2276-2282
A thermodynamic variational model derived by minimizing the Helmholtz free energy of the MOS device is presented. The model incorporates an anisotropic permittivity tensor and accommodates a correction for quantum-mechanical charge confinement at the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::599203436ffc5cbcaa9fd5dd08bce361
https://doi.org/10.1109/ted.2007.902903
https://doi.org/10.1109/ted.2007.902903
Publikováno v:
2015 China Semiconductor Technology International Conference.
The Trench Insulated Gate Bipolar Transistor (TIGBT) has become of central importance in high power high switching speed applications. Breakdown in these devices is strongly influenced, among other factors, by subtle details of trench geometry, espec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4697d89a8b25385332af4d39f3ff0ea5
https://doi.org/10.1109/cstic.2015.7153329
https://doi.org/10.1109/cstic.2015.7153329
Publikováno v:
Solid-State Electronics. 50:1097-1104
Recently, metal–oxide–organic semiconductor capacitors (MOOSCAPs) and organic field effect transistors (OFETs) using organic semiconductor (OS) materials such as arylamino–poly-phenylene-vinylene (arylamino–PPV), pentacene, etc., have been re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d231bacea7956131a4e1b4896e6187c6
https://doi.org/10.1016/j.sse.2006.04.032
https://doi.org/10.1016/j.sse.2006.04.032