Zobrazeno 1 - 10
of 1 404
pro vyhledávání: '"Normally off"'
Autor:
Mingkun Li, Xueqia Zhang, Shuopei Jiao, Yanrong Wang, Shuhua Wei, Jiang Yan, Jing Zhang, Xufang Zhang
Publikováno v:
Functional Diamond, Vol 4, Iss 1 (2024)
Diamond has superior physical and electronic properties and it is regarded as an ultimate material of power-electronics applications. Numerous studies have been focusing on the diamond-based power devices, especially on diamond metal-oxide-semiconduc
Externí odkaz:
https://doaj.org/article/4b4245526a534b63921003ae11aa5214
Autor:
Giovanni Giorgino, Marcello Cioni, Cristina Miccoli, Leonardo Gervasi, Marcello Francesco Salvatore Giuffrida, Martina Ruvolo, Maria Eloisa Castagna, Giacomo Cappellini, Giuseppe Luongo, Maurizio Moschetti, Aurore Constant, Cristina Tringali, Ferdinando Iucolano, Alessandro Chini
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 6, Iss , Pp 100338- (2023)
AlGaN/GaN devices for both power and RF applications have been investigated in this work. In particular, regarding power applications, 100 V p-GaN gate transistors have been analysed both in DC and in dynamic conditions with specific attention to the
Externí odkaz:
https://doaj.org/article/d4cd7a31ce314b39a47c1070eb851cea
Autor:
Longfei Yang, Huiqing Sun, Ruipeng Lv, Zhen Liu, Yuanhao Zhang, Penglin Wang, Yuan Li, Yong Huang, Zhiyou Guo
Publikováno v:
IEEE Access, Vol 11, Pp 134230-134238 (2023)
This paper presents a GaN-based High Electron Mobility Transistor (HEMT) with a connected dual-channel structure (CDC-HEMT). Specifically, the Al0.05Ga0.95N layer beneath the first channel enables the second channel to be in a non-conducting state wh
Externí odkaz:
https://doaj.org/article/7e4d102b6e8445b392322bf85fd46358
Autor:
Mohammed Benjelloun, Zahraa Zaidan, Ali Soltani, Noelle Gogneau, Denis Morris, Jean-Christophe Harmand, Hassan Maher Maher
Publikováno v:
IEEE Access, Vol 11, Pp 40249-40257 (2023)
A new vertical transistor structure based on GaN nanowire is designed and optimized using the TCAD-Santaurus tool with an electrothermal model. The studied structure with quasi-1D drift region is adapted to GaN nanowires synthesized with the bottom-u
Externí odkaz:
https://doaj.org/article/f184cc81cef341438010285919eef7a0
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 167-173 (2023)
High temperature operation of enhancement-mode (E-mode) and depletion-mode (D-mode) AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) was demonstrated. By using the circular device structure, off-state current was
Externí odkaz:
https://doaj.org/article/d738a1ee438d40aaa1efdeb0815b5182
Autor:
Mietek Bakowski
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2023)
This paper reviews the prospects of normally-off (N-off) JFET switch in SiC. The potential of selected vertical JFET concepts and all-JFET cascode solutions for N-off operation is analyzed using simulations. The performance of analyzed concepts is co
Externí odkaz:
https://doaj.org/article/c2efe79712c64b90be2932b28cb285fd
Akademický článek
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Akademický článek
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Akademický článek
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Autor:
Giovanni Giorgino, Giuseppe Greco, Maurizio Moschetti, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Patrick Fiorenza, Fabrizio Roccaforte, Ferdinando Iucolano
Publikováno v:
Crystals, Vol 13, Iss 9, p 1309 (2023)
The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer
Externí odkaz:
https://doaj.org/article/9d2901c427f84c1eaf7840dfab16a07e