Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Noriyuki Hirayanagi"'
Autor:
Yoji Watanabe, Yuho Kanaya, Yusuke Saito, Toshiaki Sakamoto, Kazuo Masaki, Soichi Owa, Thomas Koo, Bryant Lin, Michael Tan, David Tseng, Conrad Sorensen, Sujuan Li, Steve Renwick, Noriyuki Hirayanagi, Bausan Yuan
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Autor:
Yuho Kanaya, Yoji Watanabe, Yusuke Saito, Toshiaki Sakamoto, Ryota Matsui, Yosuke Okudaira, Shunsuke Kibayashi, Koshi Komuro, Hiroyuki Tsukamoto, Soichi Owa, Thomas Koo, David Tseng, Conrad Sorensen, Sujuan Li, Stephen Renwick, Noriyuki Hirayanagi, Bausan Yuan
Publikováno v:
Photomask Technology 2022.
Autor:
Yoji Watanabe, Yuho Kanaya, Yusuke Saito, Toshiaki Sakamoto, Soichi Owa, Thomas Koo, Rocky Mai, David Tseng, Conrad Sorensen, Hwan Lee, Stephen Renwick, Noriyuki Hirayanagi, Bausan Yuan
Publikováno v:
Optical and EUV Nanolithography XXXV.
Autor:
Yoji Watanabe, Thomas Koo, David Tseng, Toshiaki Sakamoto, Yusuke Saito, Stephen Renwick, Hwan Lee, Bausan Yuan, Yuho Kanaya, Noriyuki Hirayanagi, Craig Poppe, Conrad Sorensen, Soichi Owa
Publikováno v:
Photomask Technology 2021.
The Digital Scanner (DS) being developed by Nikon is an optical maskless exposure tool with DUV light source and a micromirror-type spatial light modulator (SLM). The SLM forms a pixelated image; although each micromirror operates in a binary mode, t
Autor:
Conrad Sorensen, Hwan Lee, Soichi Owa, Yoji Watanabe, Yusuke Saito, Craig Poppe, Stephen Renwick, Yuho Kanaya, Hirotaka Kono, Bausan Yuan, Thomas Koo, David Tseng, Noriyuki Hirayanagi, Toshiaki Sakamoto
Publikováno v:
Optical Microlithography XXXIV.
Digital Scanner (DS), a DUV optical maskless exposure tool is being developed. It uses a micromirror-type spatial light modulator (SLM) to create the “mask” pattern combined with a solid state laser with wavelength of 193 or 248 nm. The exposure
Autor:
Katsutoshi Kobayashi, Tomoharu Fujiwara, Toshikatsu Tobana, Katsuyoshi Kodera, Hironobu Sato, Shinya Minegishi, Naoko Kihara, Yoshiaki Kawamonzen, Hideki Kanai, Yusuke Kasahara, Yuriko Seino, Tsukasa Azuma, Ken Miyagi, Noriyuki Hirayanagi
Publikováno v:
Microelectronic Engineering. 134:27-32
Display Omitted We report a novel simple sub-15nm L/S patterning process using PS-b-PMMA for DSA lithography.The HP 15nm L/S DSA patterning was demonstrated on 300mm wafer.3D BCP internal defect could be minimized by an optimization of material and a
Autor:
Noriyuki Hirayanagi, Yusuke Kasahara, Yoshiaki Kawamonzen, Naoko Kihara, Toshikatsu Tobana, Tomoharu Fujiwara, Tsukasa Azuma, Hironobu Sato, Shinya Minegishi, Ken Miyagi, Hideki Kanai, Katsutoshi Kobayashi, Katsuyoshi Kodera
Publikováno v:
Journal of Photopolymer Science and Technology. 27:31-36
Autor:
Soichi Owa, Noriyuki Hirayanagi
Publikováno v:
SPIE Proceedings.
In the past 10 years, immersion lithography has been the most effective high volume manufacturing method for the critical layers of semiconductor devices. Thinking of the next 10 years, we can expect continuous improvement on existing 300 mm wafer sc
Autor:
Shinya Minegishi, Teruaki Hayakawa, Yusuke Kasahara, Toshikatsu Tobana, Noriyuki Hirayanagi, Naoko Kihara, Katsutoshi Kobayashi, Hironobu Sato, Yoshiaki Kawamonzen, Tsukasa Azuma, Hideki Kanai, Tomoharu Fujiwara, Katsuyoshi Kodera, Ken Miyagi, Yuriko Seino
Publikováno v:
MRS Proceedings. 1750
This paper introduces a fabrication method to achieve sub-15 nm line-and-space (L/S) patterns by combining grapho- and chemo-epitaxy using poly(styrene-block-methyl methacrylate) copolymer (PS-b-PMMA). The fabrication method is simple, since it elimi
Autor:
Yusuke Kasahara, Yuriko Seino, Naoko Kihara, Katsuyoshi Kodera, Yoshiaki Kawamonzen, Hironobu Sato, Hideki Kanai, Tomoharu Fujiwara, Katsutoshi Kobayashi, Shinya Minegishi, Ken Miyagi, Toshikatsu Tobana, Tsukasa Azuma, Noriyuki Hirayanagi
Publikováno v:
MRS Proceedings. 1750
A specific type of buried defect in lamellar phase diblock copolymer was studied by experiments and simulations using self-consistent field theory (SCFT). The defects had 3-dimensional structures and created hexagonally arranged holes. They existed n