Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Noritomo Mitsugi"'
Autor:
Kaoru Kajiwara, Kazutaka Eriguchi, Kazuhiro Fusegawa, Noritomo Mitsugi, Shuichi Samata, Kazuhisa Torigoe, Kazuhiro Harada, Masataka Hourai, Shin-Ichi Nishizawa
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 35:620-625
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d88536a70f6afcfb89eca9ee59d6232d
https://doi.org/10.1109/tsm.2022.3199862
https://doi.org/10.1109/tsm.2022.3199862
Autor:
Tomoyuki Suwa, Keiichiro Mori, Shigetoshi Sugawa, Noritomo Mitsugi, Akinobu Teramoto, Shuichi Samata, Keiichi Hashimoto, Rihito Kuroda
Publikováno v:
Japanese Journal of Applied Physics. 59:SMMB06
The surface roughness of silicon wafer is one of the most important issues that degrade characteristics of semiconductor devices. The importance of spatial roughness frequency as an influential parameter has been pointed. In this research, the effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00258908276a9e03f3391f875119c593
https://doi.org/10.35848/1347-4065/ab918c
https://doi.org/10.35848/1347-4065/ab918c
Publikováno v:
Japanese Journal of Applied Physics. 55:021301
The iron-related deep levels in n-type silicon and their thermal stabilities were investigated by deep-level transient spectroscopy (DLTS). Three deep energy levels at E c − 0.35, E c − 0.41, and E c − 0.48 eV were observed and classified into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::322029a8066b49525f00a19a511f487c
https://doi.org/10.7567/jjap.55.021301
https://doi.org/10.7567/jjap.55.021301
Autor:
Noritomo Mitsugi, Kiyoshi Nagai
Publikováno v:
Journal of The Electrochemical Society. 151:G302
Formation of pitting at copper-contaminated sites on the silicon wafer surface during immersion in dilute hydrofluoric acid solution is elucidated by atomic force microscopy observations and electrochemical methods. It was discovered that the pit for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbb8c3c760950c956d21524aff2340fc
https://doi.org/10.1149/1.1669026
https://doi.org/10.1149/1.1669026
Publikováno v:
Japanese Journal of Applied Physics; Feb2016, Vol. 55 Issue 2, p1-1, 1p