Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Norio Tabuchi"'
Autor:
Koji Komeda, Atsushi Tajiri, K. Yodoshi, Norio Tabuchi, Koji Tominaga, Kimihide Minakuchi, Takao Yamaguchi, Yasuyuki Bessho, Yasuaki Inoue
Publikováno v:
Laser Diode Technology and Applications IV.
A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 jim thick p-cladding layer, a 900 jim long cavity length, and current-blocking regions near the cavity facets
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::548f58180f5ed158a1b0b0561de87486
https://doi.org/10.1117/12.59153
https://doi.org/10.1117/12.59153
Autor:
Koji Komeda, Koji Tominaga, Yasuaki Inoue, K. Yodoshi, Mori Kazushi, Norio Tabuchi, Kimihide Minakuchi, Atsushi Tajiri, Yasuyuki Bessho, Takao Yamaguchi
Publikováno v:
SPIE Proceedings.
Four-beam individually addressable monolithic A1GaAs laser-diode arrays havebeen developed in which each laser element can emit over 100 mW of output power in single-mode operation. The structural features of this laser include current-blockingregion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e23f80ba7c0a88a6eec31040b5edb21a
https://doi.org/10.1117/12.43823
https://doi.org/10.1117/12.43823
Autor:
K. Yodoshi, Koji Komeda, Tatsuhiko Niina, Mori Kazushi, Yasuaki Inoue, Kimihide Minakuchi, Norio Tabuchi, Yasuyuki Bessho, Takao Yamaguchi
Publikováno v:
SPIE Proceedings.
A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::848e4b56da0c134381fbfe6211df36ff
https://doi.org/10.1117/12.18248
https://doi.org/10.1117/12.18248
Autor:
Takao Yamaguchi, Yasuaki Inoue, Kimihide Minakuchi, Atsushi Tajiri, Koji Komeda, Yasuyuki Bessho, Norio Tabuchi, Koji Tominaga, K. Yodoshi
Publikováno v:
Japanese Journal of Applied Physics. 31:508
A high-power, 790 nm, eight-beam individually addressable AlGaAs laser array on 50 µm centers with a monitoring photodiode has been developed for high-speed data transfer in optical memory systems. The maximum output power of each element is over 80
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::460fdd59495ccb416c1d2adb428d727e
https://doi.org/10.1143/jjap.31.508
https://doi.org/10.1143/jjap.31.508
Autor:
Koji Komeda, Hiroki Hamada, Norio Tabuchi, Kimihide Minakuchi, Takao Yamaguchi, Tatsuhiko Niina, Yasuaki Inoue, K. Yodoshi
Publikováno v:
SPIE Proceedings.
A four-beam semiconductor laser was developed in which a monolithic array of four individually addressable GaAlAs high power lasers and four integrated Si photodiodes for monitoring the light output power of laser beams are housed in a single package
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23c597856c85493b82c8b5e23ab5fbbd
https://doi.org/10.1117/12.976349
https://doi.org/10.1117/12.976349
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Conference
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