Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Norio Hayafuji"'
Publikováno v:
Journal of Crystal Growth. 209:440-444
Unusual electrical instability caused by light illumination in double heterojunction pseudomorphic high-electron mobility transistor (DH-pHEMT) epitaxial wafers is reported for the first time. The principal parameters of DH-pHEMT, namely, sheet carri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156cacc54cea092ff79665be532180f0
https://doi.org/10.1016/s0022-0248(99)00592-8
https://doi.org/10.1016/s0022-0248(99)00592-8
Publikováno v:
Journal of Crystal Growth. 203:18-24
Dependence of layer surface morphology and electrical properties on growth conditions, growth temperature and supplying conditions of group-V sources such as solid-As and AsH 3 hydride gas, has been investigated with specially designed MBE system, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65888927192f7472963060e3bf165854
https://doi.org/10.1016/s0022-0248(99)00056-1
https://doi.org/10.1016/s0022-0248(99)00056-1
Publikováno v:
Journal of Crystal Growth. :8-11
We present the total merits of gas source MBE (GSMBE) in practical operation as a mass production tool by showing the actual application data. GSMBE realized high-quality crystal growth where at 77 K mobilities as high as 1.21×10 5 cm 2 /V s have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59cf89c4d4b38ce9abacc2d43d8bbfa9
https://doi.org/10.1016/s0022-0248(98)01266-4
https://doi.org/10.1016/s0022-0248(98)01266-4
Autor:
Yoshitsugu Yamamoto, Mutsuyuki Otsubo, Shigekazu Izumi, Norio Hayafuji, Kazuhiko Sato, Tetsuro Kunii, Shinichi Miyakuni
Publikováno v:
Journal of Crystal Growth. :404-410
Selective area regrowth of silicon-doped GaAs has been successfully achieved by chemical beam epitaxy (CBE) on dry etched trench structures. Abrupt doping-interface and excellent doping controllability have also been achieved by using a novel silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b22190d3fdabd1f002a192419c9e6372
https://doi.org/10.1016/s0022-0248(96)00874-3
https://doi.org/10.1016/s0022-0248(96)00874-3
Publikováno v:
Journal of Crystal Growth. 150:7-12
Drastic reduction of irregular defect density in molecular beam epitaxy (MBE) grown GaAs is obtained by using a novel arsenic Knudsen effusion cell with a cracking furnace. A surface defect density of less than 10 cm −2 is routinely achieved for co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef402f27a92e2e35196ca73eea7f28bd
https://doi.org/10.1016/0022-0248(95)80171-8
https://doi.org/10.1016/0022-0248(95)80171-8
Autor:
Shigekazu Izumi, Shigeru Mitsui, Saburo Takamiya, M. Tsugami, Norio Hayafuji, Masayuki Sakai, Wataru Susaki, Teruyuki Shimura, Takuji Sonoda
Publikováno v:
Journal of Crystal Growth. 150:1287-1291
The experimental correlation between current gain β of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) and oxygen in the n-AlGaAs emitter layer is discussed quantitatively. It has been observed that β decreases monotonically with an increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c64edc03d78692c5e28dfeb0e8f82014
https://doi.org/10.1016/0022-0248(95)80146-4
https://doi.org/10.1016/0022-0248(95)80146-4
Autor:
N. Fujii, M. Tsugami, Kaoru Kadoiwa, Norio Hayafuji, M. Kato, T. Ishida, S. Takamiya, Shigeru Mitsui, Takuji Sonoda, T. Motoda
Publikováno v:
Journal of Crystal Growth. 145:147-152
The mechanism of passivation effect on the hole concentration in Zn-doped (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P layers grown by metalorganic chemical vapor deposition (MOCVD) is investigated. It is found that oxygen concentration in AlGaInP should be suppres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51d93671ba34cd9fb29cbb29fb82ca9d
https://doi.org/10.1016/0022-0248(94)91042-1
https://doi.org/10.1016/0022-0248(94)91042-1
Autor:
Norio Hayafuji, Akihiro Shima, Motoharu Miyashita, M. Aiga, Takeshi Miura, W. Susaki, Tomoko Kadowaki
Publikováno v:
IEEE Journal of Quantum Electronics. 30:24-30
An approach to large-scale fabrication of high-power laser diodes lasing at a wavelength of around 780 nm is described. Heterostructures with AlGaAs triple quantum well (TQW) active layers are grown by using a metalorganic chemical vapor deposition (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d08232c423fedf28ec520e2d90cc849d
https://doi.org/10.1109/3.272057
https://doi.org/10.1109/3.272057
Publikováno v:
Journal of Crystal Growth. 134:35-42
Selective metalorganic chemical vapor deposition (MOCVD) growth of GaAs on Al 0.48 Ga 0.52 As combined with in situ HCl gas etching was investigated. In the case that AlGaAs surface was oxidized prior to the in situ HCl gas etching, accumulation of b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c56810d99cc4abc8835a8d82ca3d6d7e
https://doi.org/10.1016/0022-0248(93)90006-i
https://doi.org/10.1016/0022-0248(93)90006-i
Autor:
Toshio Murotani, Motoharu Miyashita, Akihiro Shima, S. Karakida, Norio Hayafuji, Hirotaka Kizuki, Yutaka Mihashi, S. Kageyama, Nobuaki Kaneno
Publikováno v:
Journal of Crystal Growth. 133:281-288
Successful large-scale (twelve 2 inch diamter wafers/run) metalorganic chemical vapor deposition (MOCVD) growth of AlGaAs multiple quantum well (MQW) structure for 780 nm high-power lasers using a barrel-shaped reactor is demonstrated. Excellent unif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da1a326c43f2353b95d276031c58842
https://doi.org/10.1016/0022-0248(93)90166-t
https://doi.org/10.1016/0022-0248(93)90166-t