Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Norimichi Anazawa"'
Seamless long line and space pattern fabrication for nanoimprint mold by using electron beam stepper
Publikováno v:
Microelectronic Engineering. 88:2074-2078
Nanoimprint lithography (NIL) is a simple process to fabricate nanostructure devices with high throughput and low cost. The mold fabrication process is an important factor to improve NIL technology. Adopting a seamless pattern mold fabrication proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::461800f2ffe5e7a1a5a777df0ccb84f7
https://doi.org/10.1016/j.mee.2011.02.105
https://doi.org/10.1016/j.mee.2011.02.105
Autor:
Makoto Okada, Kaori Yanagihara, Takashi Kishiro, Norimichi Anazawa, Shinji Matsui, Masashi Ataka
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:740-743
The nanoimprint molds are usually fabricated by electron beam (EB) lithography. In recent years, a large-area mold fabrication with a high throughput is required to use nanoimprint lithography to produce devices in mass production. Using a convention
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76877cb2eaf9c726c8a82e1313c320ac
https://doi.org/10.1116/1.3449270
https://doi.org/10.1116/1.3449270
Publikováno v:
Surface and Interface Analysis. 40:1728-1731
Recent progress in the study of secondary electron (SE) emission has enabled the secondary yields to be evaluated quantitatively for major part of material of practical interest, inorganic, and metrological substances.1 We have been involved in the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a59dd54998da2a7dde85c3c3bdb7f269
https://doi.org/10.1002/sia.2888
https://doi.org/10.1002/sia.2888
Autor:
Naoki Yasumitsu, Toyoji Fukui, Tsutomu Miyatake, Akira Higuchi, Nobuo Shimazu, Norimichi Anazawa, Akihiro Endo, Hiroshi Nozue, Haruo Kasahara
Publikováno v:
Journal of Photopolymer Science and Technology. 15:403-409
A s-tool for Low Energy Electron-beam Proximity Projection Lithography (LEEPL)1-2 has been developed for proof of lithography (POL) of mass production tool, which is applied to required performance in 100-nm and 70-nm technology node. Major features
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4393e4d2db03b9f256694c86583db37
https://doi.org/10.2494/photopolymer.15.403
https://doi.org/10.2494/photopolymer.15.403
Publikováno v:
SPIE Proceedings.
For evaluation of high-end photomasks for under 65 nm design rule wafers, Holon has developed EMU-Navi, optional software for Holon EMU-series mask Critical Dimension Scanning Electron Microscope (CD-SEM), which helps automated and accurate CD measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3615477d72ddb305e601c1c7bfdeb08d
https://doi.org/10.1117/12.632000
https://doi.org/10.1117/12.632000
Autor:
Hitomi Satoh, Izumi Santo, Masashi Ataka, Katsuyuki Takahashi, Naoyuki Nakamura, Norimichi Anazawa, Yasunobu Kitayama
Publikováno v:
SPIE Proceedings.
Recently, in Critical Dimension (CD) measurement on high-end masks, Optical Proximity Correction (OPC) pattern measurement is on increase and it has become important to measure angled lines. In CD searching on a CAD layout viewer, the exact CD values
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e4a76a0f2ecf952e7e08dd8f0275f20
https://doi.org/10.1117/12.632016
https://doi.org/10.1117/12.632016
Autor:
Norimichi Anazawa, Kiyoaki Tsuta, Jiro Yamamoto, Masaki Yamabe, Satoru Maruyama, Teruo Iwasaki
Publikováno v:
SPIE Proceedings.
A new mask inspection system using transmission electron beam (EB) technology is being developed to detect defects on electron projection lithography (EPL) masks with design rules of 65-nm and below. In our new system, we use the transmission EB imag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a73e89d7ace1c9bdb414ec3a35edee3b
https://doi.org/10.1117/12.484975
https://doi.org/10.1117/12.484975
Autor:
Naoki Yasumitsu, Akira Higuchi, Hiroshi Nozue, Nobuo Shimazu, Tsutomu Miyatake, Norimichi Anazawa, Akihiro Endo, Toyoji Fukui
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:311
We have proposed low energy electron-beam proximity projection lithography [T. Utsumi, Jpn. J. Appl. Phys., Part 1 38, 7046 (1999); J. Vac. Sci. Technol. B 17, 2897 (1999)] (LEEPL) for LSI production lithographic processes below 100-nm-feature size.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbe9723830f7ba544d96c0d60d1fa618
https://doi.org/10.1116/1.1540987
https://doi.org/10.1116/1.1540987
Publikováno v:
Japanese Journal of Applied Physics. 30:2112
A scanning electron microscope (SEM) with an immersion-type objective lens has been developed. The objective lens generates a strong axial magnetic field of about 0.17 T at a wafer surface and has a very short focal length of about 2.5 mm. The SEM re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd9db90e8f642c4b921d31a8bf6d318b
https://doi.org/10.1143/jjap.30.2112
https://doi.org/10.1143/jjap.30.2112
Publikováno v:
SHINKU. 25:439-447
Making use of a liquid metal gallium ion source, a scanning ion microscope (SIM) has been developed which produces ion-induced secondary electron images. The gallium ion source was very stable in operation at 30 kV and its mass spectrum and energy di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51d1ccfde092fb5828eec21af4a89d85
https://doi.org/10.3131/jvsj.25.439
https://doi.org/10.3131/jvsj.25.439