Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Noriko Kurose"'
Autor:
Noriko Kurose, Kota Matsumoto, Fumihiko Yamada, Teuku Muhammad Roffi, Itaru Kamiya, Naotaka Iwata, Yoshinobu Aoyagi
Publikováno v:
AIP Advances, Vol 8, Iss 1, Pp 015329-015329-5 (2018)
A method for laser-induced local p-type activation of an as-grown Mg-doped GaN sample with a high lateral resolution is developed for realizing high power vertical devices for the first time. As-grown Mg-doped GaN is converted to p-type GaN in a conf
Externí odkaz:
https://doaj.org/article/4670fe47cd3a479e8863f4a3d4f5616a
Autor:
Yoshinobu Aoyagi, Noriko Kurose
Publikováno v:
Electronics and Communications in Japan. 99:3-11
We have succeeded in developing a new dynamic microplasma-excited deep ultraviolet light emitting device using aluminum gallium nitride AlGaN multi-quantum wells MIPE. The operating principle is completely different from that of current injection-typ
Autor:
Noriko Kurose, Yoshinobu Aoyagi
Publikováno v:
Journal of Applied Physics. 125:205110
A conductive AlN epitaxial layer is successfully realized by spontaneously forming via-holes filled with n-AlGaN inside an AlN buffer layer on a Si substrate. The via-holes are found to originate from the formation of an Al–Si alloy, produced from
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
If vertical AlGaN FET on Si substrate is realized, high power, high voltage FET beyond SiC and GaN FET is obtained due to the high band gap and high breakdown voltage. For realizing vertical AlGaN FET on Si substrate, conductive AlN buffer layer on S
Autor:
Yoshinobu Aoyagi, Noriko Kurose, Itaru Kamiya, Fumihiko Yamada, Naotaka Iwata, Teuku Muhammad Roffi, Kota Matsumoto
Publikováno v:
AIP Advances, Vol 8, Iss 1, Pp 015329-015329-5 (2018)
A method for laser-induced local p-type activation of an as-grown Mg-doped GaN sample with a high lateral resolution is developed for realizing high power vertical devices for the first time. As-grown Mg-doped GaN is converted to p-type GaN in a conf
Autor:
Tsutomu Araki, Naotaka Iwata, Yoshinobu Aoyagi, Noriko Kurose, K. Shibano, Kota Ozeki, Itaru Kamiya
Publikováno v:
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials.
Autor:
Yoshinobu Aoyagi, Noriko Kurose
Publikováno v:
Applied Physics Letters. 102:041114
A dynamically controlled micro-plasma-excited (MIPE) aluminum gallium nitride deep ultraviolet (DUV) light-emitting device is demonstrated. This device provides high-power DUV emission at any desired wavelength and allows enlargement of emission area
Autor:
Kawai, Norie1,2 (AUTHOR) nkawai@fais.or.jp, Honda, Manabu2 (AUTHOR) honda@ncnp.go.jp, Nishina, Emi3 (AUTHOR), Ueno, Osamu2 (AUTHOR), Fukushima, Ariko4 (AUTHOR), Ohmura, Rikka3 (AUTHOR), Fujita, Nahiko5 (AUTHOR), Oohashi, Tsutomu1 (AUTHOR)
Publikováno v:
Scientific Reports. 11/2/2022, Vol. 12 Issue 1, p1-9. 9p.
Autor:
Kurose, Noriko, Aoyagi, Yoshinobu
Publikováno v:
Journal of Applied Physics; 5/28/2019, Vol. 125 Issue 20, pN.PAG-N.PAG, 10p, 3 Color Photographs, 6 Diagrams, 4 Graphs
Autor:
KUROSE, NORIKO1, AOYAGI, YOSHINOBU1
Publikováno v:
Electronics & Communications in Japan. Jul2016, Vol. 99 Issue 7, p3-11. 9p.