Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Noriko,KOMURA"'
Autor:
Yumiko Kaji, Yoshihiro Kubozono, Yasuyuki Sugawara, Ritsuko Eguchi, Shin Gohda, Shuhei Oikawa, Noriko Komura, Keiko Ogawa, Kouki Akaike, Hidenori Goto
Publikováno v:
Sensors and Actuators B: Chemical. :544-549
Transistor characteristics and O2 gas sensing properties are investigated for picene thin film field-effect transistors (FETs) with ZrO2, Ta2O5, HfO2 and BaxSr1−xTiO3 (x = 0.4). The low-voltage operation is achieved using the above oxides with high
Autor:
Hisaki,HITOMI, Noriko,KOMURA
Publikováno v:
宇都宮大学教育学部教育実践総合センター紀要. (32号):223-230
text
紀要論文 / Departmental Bulletin Paper
紀要論文 / Departmental Bulletin Paper
Autor:
Kaori Sato, Yasuyuki Sugawara, Yoshihiro Kubozono, Noriko Komura, Xuexia He, Shin Gohda, Yumiko Kaji, Hidenori Goto, Hiroki Mitamura, Ritsuko Eguchi, Hideki Okamoto
Publikováno v:
Applied Physics Letters. 101:083301
Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene
Autor:
Hideki Okamoto, Minoru Yamaji, Shin Gohda, Yoshihiro Kubozono, Noriko Komura, Kaori Sato, Hisako Sugino, Kyosuke Satake
Publikováno v:
Organic Letters; May2011, Vol. 13 Issue 10, p2758-2761, 4p