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Publikováno v:
Materials Transactions, JIM. 37:1056-1060
Silicon nitride (SiN) thin films were prepared on austenitic type 316L stainless steel substrates by RF ion plating method. Film formation was carried out under the following conditions: N2 gas pressure 6.7 x 10 -2 Pa, RF power 400W and the evaporati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8af17087391bb4facf9f3b77fb48130
https://doi.org/10.2320/matertrans1989.37.1056
https://doi.org/10.2320/matertrans1989.37.1056
