Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Norikatsu Takaura"'
Publikováno v:
The Journal of The Institute of Electrical Engineers of Japan. 140:280-281
Autor:
Norikatsu Takaura
As dimensions in state-of-the-art CMOS devices shrink to less than 0.1 pm, even low levels of impurities on wafer surfaces can cause device degradation. Conventionally, metal contamination on wafer surfaces is measured using Total Reflection X-Ray Fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2dcafa96dd73c414b3f57f3572cb333f
https://doi.org/10.2172/1454190
https://doi.org/10.2172/1454190
Autor:
M. Kinoshita, Kazuo Ono, Motoyasu Terao, Riichiro Takemura, Yoshihisa Fujisaki, Yoshitaka Sasago, Kenzo Kurotsuchi, Norikatsu Takaura
Publikováno v:
ECS Transactions. 16:19-26
A resistive-switching solid-state brain-neocortex-like device for advanced non-volatile logic applications was developed. This device can be used as a reconfigurable logic device that is operated by electrically connecting and disconnecting pairs of
Autor:
T. Ohyanagi, M. Tai, Hiroki Shirakawa, Masaaki Araidai, M. Kinoshita, Norikatsu Takaura, M. Takato, K. Akita, Kenji Shiraishi, Takahiro Morikawa
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
A 50nm topological-switching random-access memory (TRAM) was fabricated for the first time. A high-quality Ge x Te 1−x /Sb 2 Te 3 superlattice film enabled set and reset voltages of TRAM to be less than 40% of those of PRAM. Statistical analysis of
Autor:
M. Kinoshita, Y. Saito, Kenji Shiraishi, T. Ohyanagi, M. Tai, K. Akita, Norikatsu Takaura, Takahiro Morikawa, Hiroki Shirakawa, Masaaki Araidai, Junji Tominaga
Publikováno v:
2014 IEEE International Electron Devices Meeting.
Ge x Te 1−x /Sb 2 Te 3 superlattice topological-switching random access memory (TRAM) was developed. Set and reset currents of 55 µA, the lowest for an ULSI-grade device, were obtained. TEM analyses of the Ge-Te structures and novel superlattice f
Autor:
K. Akita, Masaaki Araidai, Norikatsu Takaura, Takahiro Morikawa, Hiroki Shirakawa, Kenji Shiraishi, Shigenori Kato, M. Kinoshita, M. Tai, T. Ohyanagi
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
A 1T-1R pillar-type “topological-switching RAM” (TRAM) and the data retention of GeTe/Sb 2 Te 3 super-lattice were investigated. Reset voltage of TRAM, 2 V, was 40 % of that of the conventional PCM with Ge 2 Sb 2 Te 5 . From data retention evalua
Autor:
Norikatsu Takaura, M. Kitamura, T. Ohyanagi, M. Kinoshita, Katsumasa Kamiya, Kenji Shiraishi, T. Yamamoto, Shigenori Kato, K. Akita, Takahiro Morikawa, Masaaki Araidai, M. Tai
Publikováno v:
2014 International Conference on Microelectronic Test Structures (ICMTS).
We describe the switching mechanism of GeTe/Sb 2 Te 3 phase change memory called “topological-switching Random Access Memory” (TRAM). DC sweep and AC transient analysis of the TRAM TEGs provided evidence of enhancement of atomic movement in TRAM
Autor:
Norikatsu Takaura
Publikováno v:
MRS Proceedings. 1697
A charge-injection GeTe/Sb2Te3 superlattice phase change memory (PCM or PRAM) has been developed as a candidate for a non-volatile memory that replaces NAND flash memory. It differs from PRAM with the conventional material of GeSbTe, and is therefore
Autor:
S. Kato, Katsumasa Kamiya, Norikatsu Takaura, M. Kitamura, Masaaki Araidai, M. Tai, K. Akita, Takahiro Morikawa, M. Kinoshita, T. Ohyanagi, T. Yamamoto, Kenji Shiraishi
Publikováno v:
2013 IEEE International Electron Devices Meeting.
We developed a high quality charge-injection GeTe/Sb2Te3 superlattice phase change memory. A RESET-current of 70 μA and a SET-speed of 10 ns, the fastest ever reported, were obtained. Transmission electron microscopy analysis showed that the superla
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.