Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Norihito Fukugami"'
Publikováno v:
Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology.
EUV lithography is expected to be the most promising technology for semiconductor device manufacturing of the 7nm node and beyond. The EUV mask is a key element in the lithographic scanner optical path. The image border is a pattern free dark area ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a12c61397ff50189ec0af576b85350
https://doi.org/10.1117/12.2501999
https://doi.org/10.1117/12.2501999
Autor:
Toshio Konishi, Shingo Maruyama, Norihito Fukugami, Yoshida Itaru, Genta Watanabe, Toru Komizo, Takashi Haraguchi, Yutaka Kodera, Shin Ito, Jun Kotani
Publikováno v:
SPIE Proceedings.
EUV lithography is the most promising technology for semiconductor device manufacturing of the 10nm node and beyond. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b19acc3697a8aeca88aa4f247f048d
https://doi.org/10.1117/12.2242624
https://doi.org/10.1117/12.2242624
Autor:
Shingo Maruyama, Toshio Konishi, Shin Ito, Yutaka Kodera, Norihito Fukugami, Yoshida Itaru, Genta Watanabe, Toru Komizo, Jun Kotani, Takashi Haraguchi
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
EUV lithography is the most promising technology for semiconductor device manufacturing of the 10nm node and beyond. The EUV mask is a key element in the lithographic scanner optical path. The image border is a pattern free dark area around the die o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ed70ac9a2802481697d150ef5bbb8d6
https://doi.org/10.1117/12.2218942
https://doi.org/10.1117/12.2218942
Autor:
Emily Gallagher, Erik Verduijn, Rik Jonckheere, Yutaka Kodera, Norihito Fukugami, Yo Sakata, Genta Watanabe
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
This paper discusses defectivity of a black border around the mask pattern of a reticle for extreme EUV lithography. An opaque image border is intended to overcome the limitation of the reticle masking blades of the scanner, in providing sufficiently
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1db522071cc8d1b9b41c73586c35c5a
https://doi.org/10.1117/12.2197682
https://doi.org/10.1117/12.2197682
Publikováno v:
Proceedings of SPIE; 8/23/2018, Vol. 10807, p1-8, 8p
Publikováno v:
Hyomen Kagaku. 26:542-546
In order to produce nano-scaled ultra-fine patterns into diamond films, a nano-crystalline diamond film with very flat surface has been synthesized. The fabrication process for a nano-scaled patterning in the nano-crystalline diamond film has also be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9a99b900cf435150f95bf38c3500046
https://doi.org/10.1380/jsssj.26.542
https://doi.org/10.1380/jsssj.26.542
Black border, mask 3D effects: covering challenges of EUV mask architecture for 22nm node and beyond
Autor:
Ramasubramanian Kottumakulal Jaganatharaja, Jun Kotani, Dorothe Oorschot, Cheuk-Wah Man, Guido Schiffelers, Joep van Dijk, Yutaka Kodera, Haiko Rolff, Robert de Kruif, Ad Lammers, Eelco van Setten, Hiroaki Morimoto, Shinpei Kondo, Brid Connolly, Albrecht Ullrich, Tomohiro Imoto, Norihito Fukugami, Yo Sakata, Natalia Davydova
Publikováno v:
SPIE Proceedings.
Photomask is at the heart of a lithographic scanner’s optical path. It cannot be left non-optimized from the imaging point of view. In this work we provide new insights on two critical aspects of EUV mask architecture: optimization of absorber for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f26ca2921d588b1098109f0651d3303c
https://doi.org/10.1117/12.2066299
https://doi.org/10.1117/12.2066299
Autor:
Haiko Rolff, Jun Kotani, Brid Connolly, Norihito Fukugami, Tomohiro Imoto, Shinpei Kondo, Robert de Kruif, Albrecht Ullrich, Hiroaki Morimoto, Yutaka Kodera, Yo Sakata, Ad Lammers, Natalia Davydova, Guido Schiffelers, Eelco van Setten, Joep van Dijk
Publikováno v:
SPIE Proceedings.
The impact of various mask parameters on CDU combined in a total mask budget is presented, for 22 nm lines, for reticles used for NXE:3300 qualification. Apart from the standard mask CD measurements, actinic spectrometry of multilayer is used to qual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c072fe25851711064976568f42446f8
https://doi.org/10.1117/12.2072945
https://doi.org/10.1117/12.2072945
Publikováno v:
SPIE Proceedings.
To satisfy the requirement on the image placement accuracy, it is very important to consider the stress of the films on the mask substrate. The stress of the EUV mask is much larger than several kinds of optical masks because reflective Mo/Si multila
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f0ff1ded454a93a358bab7ec61ca5e2
https://doi.org/10.1117/12.2067965
https://doi.org/10.1117/12.2067965
Autor:
Brid Connolly, Norihito Fukugami, Shinpei Kondo, Jun Kotani, Tomohiro Imoto, Dries van Gestel, Dorothe Oorschot, David Rio, Robert de Kruif, Noreen Harned, John Zimmerman, Hiroaki Morimoto, Natalia Davydova, Yo Sakata
Publikováno v:
SPIE Proceedings.
The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (ReMa) blades and the die. When printing a die at de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07e229b9f17ecf52f04e7ecea26d8193
https://doi.org/10.1117/12.2027596
https://doi.org/10.1117/12.2027596