Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Norihiro Ikeno"'
Publikováno v:
Surface and Interface Analysis. 50:1191-1194
Autor:
Keisuke Kobayashi, Hideki Yoshikawa, Yoshiyuki Yamashita, Norihiro Ikeno, Takahiro Nagata, Seungjun Oh, Toyohiro Chikyow, Yutaka Wakayama
Publikováno v:
Thin Solid Films. 554:194-198
We used hard X-ray photoelectron spectroscopy (HX-PES) to investigate the polarity effect of ZnO, which has Zn terminated (+ polar) and O terminated (− polar) surfaces, on poly(3-hexylthiophene-2,5-diyl) (P3HT)/ZnO photovoltaic structures. HX-PES,
Autor:
Haruhiko Yoshida, Norihiro Ikeno, T. Katsumata, Koji Arafune, Shinichi Satoh, A. Ogura, T. Chikyow
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
We investigated the crystalline damage induced by SiN passivation film deposited by conventional plasma enhanced chemical vapor deposition using Raman spectroscopy. From Raman peak shift and width, we evaluated the crystalline damage in the Si surfac
Autor:
Haruhiko Yoshida, Koji Arafune, Yoshihiro Yamashita, Takaaki Katsumata, Toyohiro Chikyow, Atsushi Ogura, Shinichi Satoh, Norihiro Ikeno
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
We fabricated Y2O3-ZrO2 composition film (YZO) on Al2O3 for the field effect passivation with high negative fixed charge densities on p-type Si. The surface recombination velocity was improved down to 30 cm/s after annealing at 400 °C. High thermal
Autor:
Haruhiko Yoshida, Norihiro Ikeno, K. Arafune, Atsushi Ogura, Toyohiro Chikyow, Shinichi Satoh, T. Katsumata
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
We investigated stacking double layer structure, the Y 2 O 3 -ZrO 2 composite film (YZO) on AlO x , for the field effect passivation with high negative fixed charge densities on p-type Si. The composition spread YZO films were deposited at room tempe
Autor:
Takahiro Nagata, Shinichi Satoh, Hyunju Lee, Toyohiro Chikyow, Norihiro Ikeno, Haruhiko Yoshida, Atsushi Ogura, K. Arafune
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Autor:
Haruhiko Yoshida, Atsushi Ogura, Koji Arafune, Taka Aki Katsumata, Norihiro Ikeno, Toyohiro Chikyow, Shin Ichi Satoh
Publikováno v:
Japanese Journal of Applied Physics. 55:04ES03
We fabricated a Y2O3–ZrO2 film (YZO) on Al2O3 to achieve the field effect passivation with high negative fixed charge densities on p-type Si. The surface recombination velocity was improved down to 30 cm/s after annealing at 400 °C. This improveme
Autor:
Toyohiro Chikyow, K. Matsumoto, A. Ogura, Haruhiko Yoshida, Kenichirou Takahashi, K. Arafune, T. Tachibana, Shinichi Satoh, Norihiro Ikeno, Hyunju Lee, Naomi Sawamoto
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Autor:
Norihiro Ikeno, Hyunju Lee, K. Arafune, J. Hamano, Tomihisa Tachibana, Toyohiro Chikyow, Shinichi Satoh, Atsushi Ogura, R. Matsutani, J. Fujieda, Haruhiko Yoshida
Publikováno v:
2011 International Meeting for Future of Electron Devices.
A scanning capacitance microscopy (SCM) has been applied to the electrical characterization of passivation films for crystalline Si solar cells. An Y 2 O 3 -Al 2 O 3 system, which is a binary composition spread oxide film, was used as a fixed-charge-