Výsledky vyhledávání - "Noriaki Toyoda"

Atomic layer etching of silicon nitride film by oxygen gas cluster ion beam with acetylacetone

Autor: Masaya Takeuchi, Reki Fujiwara, Noriaki Toyoda

Publikováno v: Japanese Journal of Applied Physics.

Atomic layer etching (ALE) of silicon nitride film (SiNx) was demonstrated using oxygen gas cluster ion beam (O2-GCIB) with acetylacetone (Hacac) as adsorption gas. GCIB is a beam of aggregates of several thousand atoms, enabling low damage and high

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a7c3f0d522667c9bc09e7a5fe7b30e6b
https://doi.org/10.35848/1347-4065/acd065

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Surface Reactions Induced by Gas Cluster Ion Beams and Application for Atomic Layer Etching

Autor: Noriaki Toyoda

Publikováno v: Vacuum and Surface Science. 63:623-628

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::267fd9131b2efe900e311907fe4526fe
https://doi.org/10.1380/vss.63.623

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Immobilizing a π-Conjugated Catecholato Framework on Surfaces of SiO2 Insulator Films via a One-Atom Anchor of a Platinum Metal Center to Modulate Organic Transistor Performance

Autor: Noriaki Toyoda, Jun-ichi Fujisawa, Hiroyuki Tajima, Yuya Ashihara, Yuichi Haruyama, Masaaki Abe, Keishiro Tahara, Tomofumi Kadoya, Takashi Ikeda, Yoshiki Ozawa

Publikováno v: Inorganic Chemistry. 59:17945-17957

Chemical modification of insulating material surfaces is an important methodology to improve the performance of organic field-effect transistors (OFETs). However, few redox-active self-assembled monolayers (SAMs) have been constructed on gate insulat

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https://doi.org/10.1021/acs.inorgchem.0c02163

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Ferrocene on Insulator: Silane Coupling to a SiO2 Surface and Influence on Electrical Transport at a Buried Interface with an Organic Semiconductor Layer

Autor: Noriaki Toyoda, Yoshiki Ozawa, Satoshi Yasuno, Masaaki Abe, Takashi Ikeda, Keishiro Tahara, Tomofumi Kadoya, Hiroyuki Tajima

Publikováno v: Langmuir. 36:5809-5819

A silane coupling-based procedure for decoration of an insulator surface containing abundant hydroxy groups by con-structing redox-active self-assembled monolayers (SAMs) is described. A newly synt...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e6e860b1d3bd4721f0c3e0cd0415cabd
https://doi.org/10.1021/acs.langmuir.0c00515

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Cell Adhesion on PEEK Surface with Gas Cluster Ion Beam Irradiation

Autor: Noriaki Toyoda

Publikováno v: IEEJ Transactions on Electronics, Information and Systems. 140:443-446

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::48f5cba69c764e55026388cf91b757cd
https://doi.org/10.1541/ieejeiss.140.443

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Immobilizing a π-Conjugated Catecholato Framework on Surfaces of SiO

Autor: Keishiro, Tahara, Yuya, Ashihara, Takashi, Ikeda, Tomofumi, Kadoya, Jun-Ichi, Fujisawa, Yoshiki, Ozawa, Hiroyuki, Tajima, Noriaki, Toyoda, Yuichi, Haruyama, Masaaki, Abe

Publikováno v: Inorganic chemistry. 59(24)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::37841a9bd40815732241e01048a88c8b
https://pubmed.ncbi.nlm.nih.gov/33169615

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Ferrocene on Insulator: Silane Coupling to a SiO

Autor: Takashi, Ikeda, Keishiro, Tahara, Tomofumi, Kadoya, Hiroyuki, Tajima, Noriaki, Toyoda, Satoshi, Yasuno, Yoshiki, Ozawa, Masaaki, Abe

Publikováno v: Langmuir : the ACS journal of surfaces and colloids. 36(21)

A silane coupling-based procedure for decoration of an insulator surface containing abundant hydroxy groups by constructing redox-active self-assembled monolayers (SAMs) is described. A newly synthesized ferrocene (Fc) derivative containing a trietho

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::03cbf579cc4a0e1cf61f5533c9c9dc35
https://pubmed.ncbi.nlm.nih.gov/32407106

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Surface Planarization with Gas Cluster Ion Beams and Application to Wide-Bandgap Semiconductors

Autor: Noriaki Toyoda

Publikováno v: International Journal of Automation Technology. 12:170-174

In this study, the fundamental sputtering effects of gas cluster ion beams (GCIBs), especially for surface planarization, are reported. Because gas cluster ions are aggregates of thousands of gas atoms, the collision process for a GCIB, with dense an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8a55b8b935c661e4acb54f6b797b2c33
https://doi.org/10.20965/ijat.2018.p0170

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Relatively low temperature deposition of graphene like films with ethane GCIB irradiation

Autor: Noriaki Toyoda, D. Nakayama, H. Baba, Isao Yamada

Publikováno v: Surface and Coatings Technology. 306:218-221

Relatively low-temperature depositions of graphene like film on Ni substrate were studied using ethane gas cluster ion beam (GCIB). Ethane GCIBs realize shallow carbon implantation and create high temperature and high pressure conditions, which lead

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7c30978b14cfbdd2568ec881d7f6414e
https://doi.org/10.1016/j.surfcoat.2016.06.002

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Surface Activation and Planarization with Gas Cluster Ion Beam for Wafer Bonding

Autor: Tomoya Sasaki, Tadatomo Suga, Noriaki Toyoda, Isao Yamada

Publikováno v: ECS Transactions. 75:9-13

Surface activated bonding (SAB) has been widely used for various semiconductor wafers. In the SAB process, atomic Ar ions bombard wafer surface to form activated surface. In order to form activated surface on materials which are susceptible to irradi

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https://doi.org/10.1149/07509.0009ecst

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