Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Noriaki Oshima"'
Publikováno v:
MRS Advances. 5:1681-1685
Metal Ir films were prepared by spray chemical vapor deposition (CVD) in air from an Ir precursor, (1,3-cyclohexadiene)(ethylcyclopentadienyl)iridium, Ir(EtCp)(CHD). Film deposition was ascertained at 270–430°C on a SiO2/Si substrate and the depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::efb84c5403f19169d3b3109ce47524a9
https://doi.org/10.1557/adv.2020.99
https://doi.org/10.1557/adv.2020.99
Publikováno v:
Materials Science in Semiconductor Processing. 70:73-77
Ru thin films were deposited by pulsed metal organic chemical vapor deposition at 210 °C and 300 °C on SiO2 (native oxide)/(001)Si, HfSiON/SiON/(001)Si, and HfO2/SiON/(001)Si substrates from (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::648f57c0d920941ec3d0124fef294b32
https://doi.org/10.1016/j.mssp.2016.11.032
https://doi.org/10.1016/j.mssp.2016.11.032
Autor:
Noriaki Oshima, Toshiki Yamamoto, Hirokazu Chiba, Taishi Furukawa, Ken-ichi Tada, Tadahiro Yotsuya, Hiroshi Funakubo
Publikováno v:
Journal of the Ceramic Society of Japan. 124:510-514
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9943dc75a179ec5cdca83dc2a1519f1f
https://doi.org/10.2109/jcersj2.15245
https://doi.org/10.2109/jcersj2.15245
Publikováno v:
Journal of the Ceramic Society of Japan. 124(no. 6)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e77fb6c5236fbfdee3b589c83f43ee4a
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100744140
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100744140
Autor:
Koichi Fujimoto, Toshiki Yamamoto, Kenichi Tada, Taishi Furukawa, Tadahiro Yotsuya, Takao Suzuki, Koichiro Inaba, Noriaki Oshima, Tetsu Yamakawa, Hirokazu Chiba, Hiroshi Funakubo
Publikováno v:
ECS Transactions. 16:243-251
Novel Ta and Nb compounds Ta(NtBu)(OtBu)3 (1) and Nb(NtBu)(OtBu)3 (2) were prepared as volatile liquid precursors for the MOCVD process. Ta2O5 and Nb2O5 films were obtained by using 1 and 2 in a lower temperature regime than pentaethoxy tantalum (PET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b353f3251ad70581b6d64edded75b973
https://doi.org/10.1149/1.2981607
https://doi.org/10.1149/1.2981607
Autor:
Naoya Iwamoto, Noriaki Oshima, Masaru Shimizu, Taishi Furukawa, Kazuhisa Kawano, S. Watari, Hironori Fujisawa
Publikováno v:
Japanese Journal of Applied Physics. 45:7354-7359
Ir-based electrodes were fabricated by metal organic chemical vapor deposition (MOCVD) using a newly developed liquid precursor, (ethylcyclopentadienyl)bis(ethylene) iridium [Ir(EtCp)(C2H4)2], with a lower decomposition temperature than previous prec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcce57e3ac2b65e0931c1027a0260e6e
https://doi.org/10.1143/jjap.45.7354
https://doi.org/10.1143/jjap.45.7354
Publikováno v:
ECS Transactions. 1:139-144
Physical properties of bis(2,4-dimethylpentadienyl) ruthenium [Ru(DMPD)2] were examined by comparing with those of (2,4- dimethylpentadienyl)(ethylcyclopentadienyl) ruthenium [Ru(DMPD) (EtCp)]. Ru(DMPD)2 had almost the same vaporizing characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6a40fa49774035ce4b92d8bfc18d6d9
https://doi.org/10.1149/1.2209263
https://doi.org/10.1149/1.2209263
Autor:
Yong Kwan Kim, Kensuke Akiyama, Hiroshi Funakubo, Keisuke Saito, Akihiro Sumi, Noriaki Oshima
Publikováno v:
Thin Solid Films. 486:182-185
SrIrO 3 films were grown on (111)SrTiO 3 substrates at 650 to 700 C by metal organic chemical vapor deposition (MOCVD). Stoichiometric films were obtained above 650 C for a wide range of input gas flow rate of Ir source under a fixed rate for a Sr so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a90156f9faf8c14f9b9dbf488430c655
https://doi.org/10.1016/j.tsf.2004.11.244
https://doi.org/10.1016/j.tsf.2004.11.244
Publikováno v:
Integrated Ferroelectrics. 68:85-94
We report on preparation of Ir and IrO2 electrodes and its applications to planar and three-dimensional (3D) PZT capacitors solely by MOCVD using a novel liquid Ir precursor, Ir(EtCp) (CHD). Continuous 15–50 nm-thick Ir films with a pure metallic p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f10cb9a9fe613ebdb04e147fec118488
https://doi.org/10.1080/10584580490895699
https://doi.org/10.1080/10584580490895699
Publikováno v:
Applied Physics Letters. 83:5506-5508
We deposited an RuO2/Pb(Zr0.40Ti0.60)O3/RuO2 capacitor by metalorganic chemical vapor deposition. RuO2 and Pb(Zr0.40Ti0.60)O3 films were prepared at 350, 395, and 445 °C from respective Ru(C7H11)(C7H9)–O2 and Pb(C11H19O2)2–Zr(O⋅t-C4H9)4–Ti(O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f32c5d02bd518b9cc0abe0321b381596
https://doi.org/10.1063/1.1635964
https://doi.org/10.1063/1.1635964