Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Noriaki Nagamine"'
Autor:
Seiji Nagahara, Arnaud Dauendorffer, Arame Thiam, Xiang Liu, Yuhei Kuwahara, Cong Que Dinh, Soichiro Okada, Shinichiro Kawakami, Hisashi Genjima, Noriaki Nagamine, Makoto Muramatsu, Satoru Shimura, Atsushi Tsuboi, Kathleen Nafus, Yannick Feurprier, Marc Demand, Rajesh Ramaneti, Philippe Foubert, Danilo De Simone, Geert Vandenberphe
Publikováno v:
Advances in Patterning Materials and Processes XL.
Autor:
Seiji Nagahara, Arnaud Dauendorffer, Xiang Liu, Tomoya Onitsuka, Hisashi Genjima, Noriaki Nagamine, Yuhei Kuwahara, Yuya Kamei, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Yannick Feurprier, Marc Demand, Sophie Thibaut, Alexandra Krawicz, Steven Grzeskowiak, Katie Lutker-Lee, Eric Liu, Christopher Catano, Joshua D. LaRose, Jeffrery C. Shearer, Lior Huli, Philippe Foubert, Danilo De Simone
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2022.
Autor:
Marc Demand, Takahiro Shiozawa, Kathleen Nafus, Soichiro Okada, Yannick Feurprier, Luka Kljucar, Ainhoa Romo Negreira, Danilo De Simone, Arnaud Dauendorffer, Philippe Foubert, Hiroki Tadatomo, Yuya Kamei, Onitsuka Tomoya, Genjima Hisashi, Makoto Muramatsu, Noriaki Nagamine, Seiji Nagahara, Noriaki Oikawa, Satoru Shimura, Dinh Congque, Keisuke Yoshida, Shinichiro Kawakami
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
EUV (extreme ultraviolet) lithography is progressively being inserted in high volume manufacturing of semiconductors to keep up with node shrinkage. However, defectivity remains one big challenge to address in order to be able to exploit its full pot
Autor:
Shota Yoshimura, Yannick Feurprier, Yoshihide Kihara, Arnaud Dauendorffer, Tetsuya Nishizuka, Noriaki Nagamine, Kenta Ono, Takahiro Shiozawa, Shinya Morikita, Keisuke Yoshida, Kathleen Nafus, Atsutoshi Inokuchi, Satoru Shimura, Kiyoshi Maeda, Ken Kobayashi
Publikováno v:
Advances in Patterning Materials and Processes XXXVIII.
Extreme ultraviolet (EUV) lithography faces major challenges for smaller nodes due to the impact of stochastic and processing failures.1 One of the main challenges for pitch shrink at these nodes is the optimization of the trade-off between break typ
Autor:
Keisuke Yoshida, Satoru Shimura, Kathleen Nafus, Philippe Foubert, Takahiro Shiozawa, Arnaud Dauendorffer, Shinichiro Kawakami, Yuya Kamei, Akihiro Sonoda, Noriaki Nagamine
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
Although being progressively introduced to mass production, extreme ultraviolet (EUV) lithography still faces major challenges for 5nm and smaller nodes due to the impact of stochastic and processing failures, resulting in very narrow defect process